Page 273 - Chalcogenide Glasses for Infrared Optics
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248    Cha pte r  T e n







                           ~I 1
                                          ~I 2
                                        φ 0
                                       φ 0



                            ~I 0




                                         (a)


                                       n 0   n 1   n 2
                             I 2
                             I 1
                                   φ 0
                                φ 0                   φ 1
                                φ 0
                              I 0


                                              d
                                         (b)
              FIGURE 10.1  Optical interference due to refl ection of light from a fi lm-covered
              surface.

                 The phase lag δ between I  and I  can be calculated from
                                      1     2
                             δ =    2 π   =      2 π
                                λ × dcos θ  1  λ × 2n dcos θ 1
                                 1
                                                 1
              The two rays I  and I  combine to produce a resultant light ray of the
                          1    2
              same frequency but of different intensity and phase angle than either I
                                                                       1
              or I . The resultant reflected ray changes in intensity from maximum to
                2
              minimum values as the value of λ changes. Maximum intensity occurs
              when δ=π, 3π, 5π, or 2π (m + ½), where m is the order of interference.
        10.4  The Infrared Scan Technique for
                Epitaxial Film Thickness
              The technique is applicable because the near pure epitaxial silicon
              layer is grown on a heavily doped silicon substrate. The refractive
              indices for layer and substrate may be very close in the short-wavelength
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