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Nanomaterials Fabrication  63




































        Figure 3.24 High-resolution (a) SEM and (b) TEM images of PbSe nanowires grown in solu-
        tion in the presence of oleic acid. (c) high-resolution TEM images of PbSe nanowires
        formed in the presence of oleic acid and n-tetradecylphosphonic acid. Selected area elec-
        tron diffraction from single nanowires imaged along the (100) and (110) zone axes (insets
        to c). (d, e) TEM image of PbSe nanorings (bar 5 nm) [106].



        well-defined nanoparticles of InSe and GaSe from the vapor phase
        thermolysis of precursor molecules under CVD conditions.
                                                  t
          CVD growth using the cubane precursors [( Bu)GaSe] 4 (Figure 3.25a)
        and [(EtMe C)InSe] (Figure 3.25b) carried out on single crystal KBr
                   2
                           4

                t
                 Bu                EtMe 2 C
        (a)         t Bu      (b)          CMe 2 Et
                   Ga  Se                In  Se
               Se   Ga               Se   In
                   Se  Ga                Se  In
                           t Bu                  CMe Et
               Ga   Se                In  Se        2
           t Bu               EtMe C
                                  2
        Figure 3.25 The structure of the cubane single source precursors
        to GaSe and InSe nanoparticles [113, 114].
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