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64 Principles and Methods
substrates in a hot-walled CVD system allows for the formation of spher-
ical nanoparticles [112].
The InSe grown at 290 C from [(EtMe C)InSe] consist of spheres
2
4
(Figure 3.26) with a mean diameter of 88 nm. The electron diffraction
pattern exhibits well-defined rings, consistent with a polycrystalline
t
hexagonal InSe. As with InSe, those grown from [( Bu)GaSe] at 335 C
4
consist of pseudospherical nanoparticles; however, unlike the InSe films,
these appear as “strings of pearls” which retain their connectivity and
remain intact after being floated from the growth substrate. From analy-
sis of the micrograph, the mean GaSe particle diameter is 42 nm.
Figure 3.26 TEM micrograph of InSe nanoparticles grown from
[(EtMe 2 C)InSe] 4 at 290 C under vacuum.
