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332    So l i d - S t at e   La s e r s                                                                       Ultrafast Lasers in Thin-Disk Geometry    333


                                                                    AR coating (~1 µm)


                                                                    Gain material
                                                                    (100–300 µm)
                  AR coating (~1 µm)
                 Active region (~1 µm)

                       HR coating                                   HR coating
                        (~4–5 µm)                                   (~4–5 µm)

                      Metallic layer                                Metallic layer
                                     VECSEL           Solid-state TDL
                 Figure 13.2  Comparison of the composition of a VECSEL and a TDL disk. Although
                 the coatings are of comparable thickness, the active region in the VECSEL is roughly
                 two orders of magnitude thinner than the TDL crystal.


                         Despite the similarities outlined above, there are basic differences
                      in  terms  of  thermal  management  between  solid-state  TDLs  and
                      VECSELs. The most obvious difference is the thickness of the active
                      region (see Fig. 13.2), which in both cases is sandwiched between a
                      roughly 1-mm thick AR coating and a 4- to 5-mm thick HR distributed
                      Bragg  reflector  (DBR)  coating.  Although  typical  active  regions  of
                      VECSELs exhibit a thickness of around 1 mm, the significantly lower
                                            3+
                      absorption efficiency of Yb -doped materials requires a thickness on
                      the order of 100 mm to achieve a good absorption efficiency, even for
                      the multipass pump concept described previously. Furthermore, the
                      thermal  conductivity  for  semiconductors  is  much  higher  than  for
                      suitable crystalline insulator host materials of Yb  ions (e.g., YAG).
                                                                3+
                      Consequently, the normalized thermal resistance of a semiconductor
                      disk is much lower than that of a YAG disk (see Table 13.1), which
                      allows for significantly higher pump power densities of more than
                               2
                      30 kW/cm  in VECSELs, even in single-mode operation.  In contrast,
                                                                     10
                                                                           2
                      the pump intensity in a solid-state TDL is typically below 15 kW/cm  and
                      is even  lower  for  fundamental  mode  operation   (see  Table  13.1).
                                                                23
                      However, the typical pump beam diameters in VECSELs are smaller,
                      leading to a higher absolute thermal resistance—that is, to a larger
                      temperature increase for the same heating power. The high thermal
                      conductivity of the semiconductors requires a heat sink material with
                      an even higher thermal conductivity. According to the scaling law for
                      lasers in the thin-disk geometry, the output power increases linearly
                      with the pump and laser mode area if the pump density is kept con-
                      stant and the heat flow is dominated by a one-dimensional propaga-
                      tion into the heat sink.
                         As an example, we consider a 5-mm thick AlGaAs VECSEL struc-
                      ture directly mounted on a copper heat sink. Numerical calculations
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