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328   So l i d - S t at e   La s e r s     Ultrafast Lasers in Thin-Disk Geometry    329


                      even though they share the high-average-power scaling benefits of
                      their respective operation regimes. Ultrafast TDLs can generate 141
                      W of average power in femtosecond pulses, 12,13  which is higher than
                      any other mode-locked laser oscillator. They also generate the high-
                      est pulse energies, with up to 25 mJ at a pulse repetition rate of 2.93
                      MHz,  which  is  sufficient  for  high-speed  micromachining  applica-
                      tions.  Ultrafast VECSELs access a different operation regime than
                           14
                      TDLs, generating pulse energies in the pico- to nanojoule regime at
                      gigahertz  pulse  repetition  rates  but  with  relatively  high  average
                      power in the 100 mW to multiwatt regime, which is the highest in
                      comparison to any other gigahertz laser oscillator. Ultrafast VECSELs
                      have  a  number  of  compelling  advantages,  including  compactness
                      and their ability to operate in wavelength regions that are not easily
                      accessible  with  established  ion-doped,  solid-state  laser  materials.
                      Furthermore, it is possible to combine gain and saturable absorber in
                      one  semiconductor  structure,  enabling  mode  locking  in  a  simple,
                      straight  cavity.  These  devices  are  referred  to  as  mode-locked  inte-
                                                                         15
                      grated  external-cavity  surface  emitting  lasers  (MIXSELs).   Their
                      good mode-locking performance, in combination with the potential
                      for cost-efficient mass production, makes MIXSELs a promising alter-
                      native for many applications that currently rely on more bulky and
                      expensive laser systems.
                         This chapter describes the differences between and common fea-
                      tures  of  passively  mode-locked  high-power  laser  oscillators  in  the
                      thin-disk geometry using either diode-pumped solid-state lasers or
                      optically  pumped  semiconductor  lasers.  The  chapter  starts  with  a
                      brief introduction of the pump concepts of solid-state TDLs and VEC-
                      SELs, including a discussion of their thermal management. We then
                      explain why the fundamental laser material parameters lead to dif-
                      ferent  pulse  formation  mechanisms  and  to  different  operation
                      regimes, though with the same power scaling benefits. The chapter
                      closes with a brief summary and an outlook toward further improve-
                      ment of the performance of passively mode-locked solid-state TDLs
                      and VECSELs.



                 13.2  Pump Geometry
                      In  the  thin-disk  geometry  (c.f.,  Chap.  10),  the  disk-shaped  active
                      medium has a highly reflective (HR) coating on the back and an anti-
                      reflection  (AR)  coating  on  the  front  for  both  the  pump  and  laser
                      wavelength. In the simplest case, the resonator can be formed by the
                      disk, which then acts as an end mirror, and only one additional out-
                      put coupler (Fig. 13.1a), which is why it is also known as the active
                      mirror concept.  Especially for diode-pumped solid-state TDLs, the
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                      pump absorption length is significantly larger than the disk thick-
                      ness. Therefore, the pump light is launched onto the disk under a
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