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348 So l i d - S t at e La s e r s Ultrafast Lasers in Thin-Disk Geometry 349
technology. Even average output power levels exceeding 10 W can be
expected in the near future. Recently a MIXSEL already achieved an
average output power of 6.4 W. In comparison to the mode-locked
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solid-state TDLs, these semiconductor disk lasers access substantially
higher repetition rates in the gigahertz regime. An important future
research task is the demonstration of femtosecond-pulse durations at
high power levels. Although sub-100-fs pulses have already been
demonstrated, it will be challenging to achieve such performance at
the watt level, which is a requirement for many applications. Ultra-
fast VECSELs have a large potential for the realization of robust, cost-
efficient, ultracompact sources. The simple, straight MIXSEL cavity
geometry should allow a further increase in repetition rates to the
10 to 100-GHz regime. Ultrafast VECSELs and MIXSELs appear well
suited for replacing more complex solid-state lasers for many appli-
cations in areas as diverse as telecommunications, optical clocking,
frequency metrology, and microscopy.
References
1. Liu, X., Du, D., and Mourou, G., “Laser Ablation and Micromachining with
Ultrashort Laser Pulses,” IEEE J. Quantum Electron., 33: 1706–1716, 1997.
2. Nolte, S., Momma, C., Jacobs, H., Tünnermann, A., Chichkov, B. N.,
Wellegehausen, B., and Welling, H., “Ablation of Metals by Ultrashort Laser
Pulses,” J. Opt. Soc. Am. B, 14: 2716–2722, 1997.
3. von der Linde, D., Sokolowski-Tinten, K., and Bialkowski, J., “Laser-Solid
Interactions in the Femtosecond Time Regime,” Appl. Surf. Sci., 109/110: 1–10,
1997.
4. Keller, U., Miller, D. A. B., Boyd, G. D., Chiu, T. H., Ferguson, J. F., and Asom,
M. T., “Solid-State Low-Loss Intracavity Saturable Absorber for Nd:YLF
Lasers: An Antiresonant Semiconductor Fabry-Perot Saturable Absorber,”
Opt. Lett., 17: 505–507, 1992.
5. Keller, U., Weingarten, K. J., Kärtner, F. X., Kopf, D., Braun, B., Jung, I. D.,
Fluck, R., et al., “Semiconductor Saturable Absorber Mirrors (Sesams) for
Femtosecond to Nanosecond Pulse Generation in Solid-State Lasers,” IEEE J.
Sel. Top. Quantum Electron., 2: 435–453, 1996.
6. Südmeyer, T., Marchese, S.V., Hashimoto, S., Baer, C. R. E., Gingras, G., Witzel,
B., and Keller, U., “Femtosecond Laser Oscillators for High-Field Science,”
Nature Photonics, 2: 599–604, 2008.
7. Keller, U., and Tropper, A. C., “Passively Modelocked Surface-Emitting
Semiconductor Lasers,” Phys. Rep., 429: 67–120, 2006.
8. Giesen, A., Hügel, H., Voss, A., Wittig, K., Brauch, U., and Opower, H.,
“Scalable Concept for Diode-Pumped High-Power Solid-State Lasers,” Appl.
Phys. B, 58: 365–372, 1994.
9. Giesen, A., and Speiser, J., “Fifteen Years of Work on Thin-Disk Lasers: Results
and Scaling Laws,” IEEE J. Sel. Top. Quantum Electron., 13: 598–609, 2007.
10. Rudin, B., Rutz, A., Hoffmann, M., Maas, D. J. H. C., Bellancourt, A.-R., Gini,
E., Südmeyer, T., and Keller, U., “Highly Efficient Optically Pumped Vertical
Emitting Semiconductor Laser with More Than 20-W Average Output Power
in a Fundamental Transverse Mode,” Opt. Lett., 33: 2719–2721, 2008.
11. Kuznetsov, M., Hakimi, F., Sprague, R., and Mooradian, A., “High-Power
(>0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting
Semiconductor Lasers with Circular TEM00 Beams,” IEEE Photon. Technol.
Lett., 9: 1063–1065, 1997.