Page 221 - Inorganic Mass Spectrometry - Fundamentals and Applications
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7 ~igh-depth-resolution profiling with a magnetic sector instrument using a 1-
keV O,+ primary beam at 56" incidence with oxygen flooding. (From Ref. 126.)
nm shift in the first layer, as shown in Fig. 4.37, but the results were similar to the
~uad~pole results with 400 eV O,+ at 0" and no flooding.
A profile of a 500-eV arsenic implant by Hitzman and Mount E1271 shows
the effect of CS+ primary ion energy and incidence angle on depth resolution
(Fig. 4.38). These As- profiles also demonstrate the high sensitivity of the SIMS
technique.
The use of MCs+ to make quantitative profiling easier is illustrated in Fig.
4.39 [1281. Each element in the structure ~aAs/Al~~s~n~aAs/quantum-~ell
(20 X Al~~s/~aAs)/~aAs profiled as MCs+.
is
Imaging of elemental and isotopic dist~butions on surfaces has proved useful for
diffusion measurements, corrosion and reactivity studies, contamination identifi-
cation, and many other applications. SIMS imaging is particularly useful because
of its high sensitivity. An example was the application problem in which a IJ-
a
to
