Page 279 - Instrumentation Reference Book 3E
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Measurement techniques: thermocouples 263

                                                      It can be seen that  I/,  is directly proportional  to
                                                      temperature in Kelvins. The voltage is converted
                                                      to  a  temperature-dependent  current  1,  by  low
                                                      temperature coefficient thin film resistors R5 and
                                                      R6. These resistors are laser-trimmed to give the
                                                      required  tolerance  at 25°C. Transistors  Qs  and
                                                      Q1  provide  the  temperature-dependent  voltage
                                                      V,. The remaining transistors provide the amplifi-
                                                      cation  to  give  the  output current  of  one micro-
                                                      ampere  per  Kelvin.  The  transistor  Qlo supplies
                                                      the  bias  and  substrate  leakage  currents  for  the
                                                      circuit. The device is packaged in a transistor can
                                                      or  ceramic capsule  or  it  can  be  supplied  as  the
                                                      naked chip for encapsulation into other equipment.

                                20'  c
                    Temperature                       14.5  Measurement t       ~    c   ~   ~    i  ~    ~   ~   s    ~
             Figure14.22  Temperature characteristic of silicon diode.   thermocouples
                                                      14.5.1  Thermoelectric effects
             voltage change with temperature is substantial and   If an electrical circuit consists of entirely metallic
             as the characteristic is linear it makes a very useful   conductors and all parts of the circuit are at the
             measurement  or  control  signal.  There  are  two   same temperature, there will be no electromotive
             principal disadvantages to silicon diodes as control   force in the circuit and therefore no current flows.
             elements. The negative coefficient (Figure 14.22) is   However, if the circuit consists of more than one
             not  fail-safe. If  the  control loop is  controlling a   metal and if junctions between two metals are at
             heater, breakage of the diode wires would be read   different temperatures, then there will be an emf.
             by  the  controller  as  low  temperature  and  full   in the circuit and a current will flow. Figure 14.24
             power would be applied to the heaters. The second   illustrates  this  effect.  The  e.m.f.  generated  is
             disadvantage  is  the  rather  limited  temperature   called a thermoelectric e.m.f. and the heated junc-
             range. Also if a silicon diode is heated above about   tion is a thermocouple.
             200 "C  it  is  completely  destroyed,  effectively
             becoming a short circuit.
                                                      14.5.1.1  Seebeck effect
                                                      In 1821 Seebeck discovered that if a closed circuit
             14.4.3.2  Tei7?perattire-sensirzg integrated circuits   is formed of two metals, and the two junctions of
             The temperature  characteristic  of  a silicon junc-   the metals are at different temperatures, an elec-
             tion  can  be  improved  if  the measuring  diode is   tric current will flow round the circuit. Suppose a
             incorporated  in  an  integrated circuit  containing   circuit is formed by twisting or soldering together
             an amplifier. Devices are available either to pro-   at their ends, as shown in Figure  14.25, wires of
             vide an output current proportional to tempera-   two different metals such as iron and copper. If
             ture  or  an  output  voltage  proportional  to   one junction remains at room temperature, while
             temperature.  Figure  14.23(a) shows the basis  of   the  other  is  heated  to  a  higher  temperature,  a
             such a device. Figure 14.23(b) shows the circuit of   current is produced, which flows from copper to
             the Analog Devices temperature sensor type AD   iron at the hot junction, and from iron to copper
             590. The operating range of this device is -55  'C   at the cold one.
             to  +150"C.  The  temperature  is  sensed  by  the   Seebeck arranged a series of 35 metals in order of
             emitter-base junctions  of  two transistors.  If  two   their thermoelectric properties. In a circuit made up
             identical  transistors  are  operated  at  a  constant   of any two of the metals, the current flows across
             ratio r  of collector current densities then the dif-   the hot junction from the earlier to the later metal
             ference in V, in their base emitter voltages is given   of the series. A portion of his list is as follows: Bi-
             by equation (14.17).                     Ni-Co-Pd-Pt-U-Cu-Mn-Ti-Hg-PbSn-Cr-Mo-
                                                      Rh-Ir-Au-  Zn-W-Cd-Fe-As-Sb-Te.
                     KT
                 V, = - 'In r                (14.17)
                      4
                                                      14.5.1.2  Peltier effect
             where  K  is  Boltzmann's  constant  (1.380 66 x
             10p'3J. Kpl), y is the electron charge (1.602 19 x   In  1834 Peltier  discovered that  when  a  current
                  coulomb) and Tis temperature in Kelvins.   flows across  the junction  of  two  metals  heat  is
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