Page 241 - Introduction to Information Optics
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226                      4. Switching with Optics

         The change in refractive index induced by the EO effect will produce a phase
       change to the optical beam passing through the crystal. The total phase change
       over an interaction length L (equal to the electrode length) is a function of the
       refractive index change An. It is expressed by

                                                                     (4.35)
                                          / 0
       where /L 0 is the free-space wavelength.
         Electrically induced index change can be directly used for phase modulation.
       Amplitude modulation can be achieved via phase modulation, either by using
       interferometric techniques (Mach-Zehnder modulator, balanced bridge
       switch) or by phase-matched control in directional couplers.


         4,3.2.1,1. Waveguide Phase Modulator
         A typical waveguide phase modulator with two electrode configurations is
       shown in Fig. 4.20. If the electrodes are placed on either side of the waveguide
       (Fig. 4.20a), the horizontal component of the electric field is used. If one
       electrode is placed directly over the waveguide (Fig. 4.20b), the vertical
       component of the field is used. The crystal orientation must be chosen to use
       the largest electro-optic coefficient. For a LiNbO 3 modulator, the largest
       electro-optic coefficient, T 33, should be used, and the orientation of the crystal
       is shown in Fig. 4.20a for the TE wave polarized in the plane of the substrate.
         LiNbO 3 waveguides are commonly fabricated using the Ti in-diffusion
       process. In the process, Ti stripes with a thickness of 50-60 nm and a width of
       5 /mi are evaporated onto a LiNbO 3 crystal and in-diffused at a proper
       temperature for a few hours. This creates waveguides with Gaussian index
       distribution in depth. The maximum index increase at the surface of the
       LiNbO 3 waveguide is typically a few hundredths.
         Using the scheme shown in Fig. 4.20a, the relationship between the effective
       electro-optically induced index change and the applied voltage can be ex-
       pressed as


                                                                     (436)

       where d is the interelectrode gap and F is the overlap integral between the
       applied electric field and the optical mode. The phase change over an
       interaction length L is thus expressed as

                                     nnf,    VL
                                A^-^T,, —F.                          (4.37)
                                      A n " d
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