Page 410 -
P. 410

EFAB™ Technology and Applications                                                          6-19


             reduce compliancetowiden sense range or provide more robust structures. The more complex construc-
             tions available also enable additional features such as self-test or local monitoring of induced stress to
             compensate the device.
               Radio frequency MEMS can benefit from the geometrical freedom of EFAB by building complex, fully
             three-dimensional coaxial structures such as transmission lines, couplers, filters, phase shifters, and the
             like. Demonstrated and published designs have shown high performance in small sizes [R. Chen, 2004, and
             Reid, 2004]. Figure 6.16 shows an example of a three-pole Ka-band filter implemented in EFAB technol-
             ogy. It is shown complete, and also without the top layers so that the internal conductor can be seen. The
             whole device fits within an 8-mm diameter circle.
               These examples have illustrated just a few of the ways in which changing to a fully three-dimensional,
             arbitrary aspect ratio process gives the designer tools to increase performance by large factors. There are also
             examples of devices which simply could not be produced by previous processes and can be produced by the
             EFAB process. One example is complex meso-scale mechanics such as the helical spring seen in Figure 6.1.
             Devices such as this one (and some much more complex spring assemblies) can be constructed at scales up
             to millimeters with features accurate to microns. Thus, devices that bridge the scale gap between macro- and
             microsystems can be built. Another example is construction of magnetic microdevices which include high-
             conductivity coils and high-magnetic permeability elements. Examples of such devices are motors, solenoid
             actuators, and microscale linear variable differential transformers (LVDTs) for displacement sensing.


             Acknowledgments

             The authors wish to express their appreciation to the Defense Advanced Research Projects Agency (DARPA)
             Defense  Sciences  Office  and  Microsystems  Technology  Office, for  seed  funding  of EFAB  technology
             development under the Mesoscale Machines and MEMS Programs.
               EFAB™, Instant Masking™, Instant Mask™, and LayerView™ are trademarks of Microfabrica, Inc Solid
             Works  and  COSMOSWorks  are  registered  trademarks  of SolidWorks  Corporation. Pro/ENGINEER  is  a
             registered trademark of Parametric Technology Corporation. ANSYS is a registered trademark of ANSYS,
             Inc. Windows® is a registered trademark of Microsoft Corporation.


             Defining Terms


             Build: The result of the EFAB layer process: one or more layers deposited on a wafer or other substrate
             EFAB™ technology: A multilevel 3-D microfabrication process based on electrochemical deposition and
                  planarization to define the geometry of the fabricated device on each layer
             Instant Masking™: A micropatterning method involving a conformable patterned mask, an electrically
                  active bath, and a source of current. When used for electrodeposition, the mask is mated with a
                  substrate in the presence of an electrodeposition bath, and current is applied to deposit material
                  onto the substrate in regions not contacted by the mask.
             Layerize™: Special-purpose  software, developed  for  use  with  EFAB  technology, that  imports  a  3-D
                  geometry file produced by standard 3-D CAD systems and exports a 2-D geometry file in a format
                  acceptable to standard photomask pattern generators.
             Substrate: Either the actual substrate upon which a microstructure is fabricated, or equivalently, the pre-
                  vious layer of a multilayer structure, which itself behaves as a substrate for the next layer.


             References
             Chen, R.T., Brown, E.R., and  Bang, C.A. (2004)  “A  Compact  Low-Loss  Ka-Band  Filter  Using
                  3-Dimensional Micromachined Integrated Coax,” in Proc. IEEE International Conference on Micro
                  Electro Mechanical Systems, 25–29 January, pp. 801–4.
             Cohen, A.L., Zhang, G., Tseng, F.G., Frodis, U., Mansfeld, F., and Will, P.M. (1999) “EFAB: Rapid, Low-
                  Cost Desktop Micromachining of High Aspect Ratio True 3-D MEMS,” Technical Digest, 12th IEEE



             © 2006 by Taylor & Francis Group, LLC
   405   406   407   408   409   410   411   412   413   414   415