Page 285 - Mechanical Engineer's Data Handbook
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ENGINEERING MEASUREMENTS                                                          273

        Torque measurement                          Principal stresses

        Two gauges are mounted on a shaft at 45" to its axis
        and perpendicular to one another. Under torsion one
        gauge is under tension and the other under compres-
        sion, the stresses being numerically equal to the shear
        stress. The gauges are connected in a bridge circuit, as
        for bending. To eliminate bending effects four gauges   Angle between o1 and e,,
        may  be  used, two being on the opposite side of  the
        shaft. In this case:                                  2eb -e,-  e,
                                                    e =  tan-'
        P= 2F,e V
                                                    where: K,=- (ea+ec)  and K, = /T e, - eb)' + (eb + e,)'
                                                                2







        7.3.4  Strain gauge rosette

        In the case of two-dimensional stress, it is necessary to
        use  three  gauges.  If  the  gauges  are  at  45"  to  one
        another, then  the principal stresses may be found as
        follows.
        Let:
        e,,  ebr e, =measured  strains
             E = Young's modulus
              v = Poisson's  ratio

        7.3.5   Characteristics of some strain
        gauges


                                                   Temperature
                           Gauge                   coefficient
                           factor,     Resistance,   of  resistance
        Material           F,          R, (0)      ("C- I)       Remarks
        Advance                2 .o    100         0.1 1 x 10-4   F, constant over wide range of
          (57%Cu, 43%Ni)                                         strain; low-temperature  ( < 250°C)
                                                                  use
        Platinum alloys        4.0      50         0.22 x 10-2    For high-temperature  (> 500 "C)
                                                                  use
        Silicon             -100  to   200         0.09           Brittle, but high F,.  Not suitable
          semiconductor     + 100                                 for large strains
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