Page 51 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim

CONCLUDING REMARKS 33

n
Ap IN Si
X X 1
Rp IN SiO 2 X X' x 1 ,
x' '
f n 1 "
xx V —
b. T*-
j? / / X '
*/ (t X X ^
— ' x' v. /< / ' / / X /;'• ^ X
/
r
/
^ /
Projected range (am) P / 7,' /' x. / x/ // x X ,' / / /.- •V
/
/,
X
X
/
/
.'
X
/
X
/
xi;,'
/
,* \
x
H-
X
/
/
/ / // / / / / X /^ X ' ^-As
/ / / t ''
x"
/ ' / /'
/ x
/
/ / S
° S s
f '*
H- ^
0
o n 0 U)
0 100 1000
(a) Energy (kev)
-
,--* X
— • — -
^, " —-- j /
. ' ^^^ ^^ — ^ j/r / J ,
-r*^7^
$
x
B- ^, -" ^ x^ ^ /
_ x ^ ^ ,{'' X' / / x x!
Projected and transverse straggle (am) / / / / // / x X X X / / x X S-, x K^ ^ X X X ^ Si
X X
X
p-
X
\ ''''
,'/
x
y
X X
X
X
X
X
/"
f
S
S
'
^
x
X
X
/
X
^R
8 s s - - A/? P
0 100 1000
(b) Energy (kev)
Figure 2.19 Projected range (a) and straggle; (b) of boron, phosphorus and arsenic ions implanted
in silicon at different ion energies (Sze 1985)