Page 50 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
P. 50

32    ELECTRONIC MATERIALS AND PROCESSING


      Schematic of a medium-current
      ion implanter
                            Resolving
                                     Acceleration  v- scan
      High-voltage          aperture
                                     tube  ,  p lates  P lates  Beam
      terminal  v.                                                         Wafer
                                                                mask
                                                                           (target)
       Analyzer
       magnet






                                                                        Faraday cup
      Ion source



      Figure 2.18  Schematic arrangement of an ion implanter for precise implantation of a dopant  into
      a  silicon  wafer  (Sze 1985)


                                      11
      and  ion densities  could be between  10  and  10 16  ions/cm 2  incident on the wafer surface.
      Figure  2.18  shows  the  schematics  of  a  medium-current ion  implanter.  It  consists  of  an
      ion  source,  a  magnet  analyser,  resolving  aperture  and  lenses,  acceleration  tube,  x-  and
      y-scan  plates,  beam  mask,  and  Faraday  cup. After  ions  are  generated  in  the  ion  source,
      the  magnetic  field  in  the  analyser  magnet  is  set  to  the  appropriate  value,  depending  on
      charge-to-mass  ratio  of  the  ion,  so  that  desired  ions  are  deflected  toward  the  resolving
      aperture  where the ion beam  is collimated.  These ions are then accelerated to the required
      energy  by  an electric  field  in the  acceleration  tube. The  beam  is then scanned  in  the  x-y
      plane  using the  x-  and  y-deflection plates  before  hitting  the  wafer  that is  placed  in  the
      Faraday  cup.
        Commonly implanted elements are boron, phosphorus, and arsenic for doping elemental
      semiconductors,  n-  or  p-type.  After  implantations,  wafers  are  given  a  rapid  thermal
      anneal  to  activate  electrically  the  dopants.  Oxygen  is  also  implanted  in  silicon  wafers
      to  form  buried  oxide  layers.  The  implanted  ion  distribution  is  normally  Gaussian  in
      shape  and  the  average  projected  range  of  ions  is  related  to  the  implantation energy
      (Figure  2.19).



      2.6  CONCLUDING       REMARKS


     This  chapter  has  introduced  the  topic  of  electronic  materials  and  has  described
      some  basic  processing  steps.  The  next  chapter  describes  another  important  class
     of  materials,  namely,  those  relating  to  the  field  of  MEMS.  These  two  chapters
     should  help  acquaint  the  reader  with  the  materials  commonly  used  in  both
     microsensors  and  MEMS   devices.  Later  chapters  deal  with  more  specialised
     processing  and  fabrication  techniques, such  as  bulk  and  surface  micromachining  and
     stereomicrolithography.
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