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Energy band engineering of metal oxide for enhanced visible light absorption  57


                –2
                                                •−
                                            CO 2 /CO 2
                                            CO 2 /HCOOH
               Potential vs. NHE (V) at pH = 1  0 1  hv  e –  H 2 O/H 2  Photoanode  H 2 O  C x H y O z  Cathode
                –1
                                            CO 2 /CO
                               –
                              e
                      CB
                                            CO 2 /HCOH
                                            CO 2 /CH 3 OH
                                            CO 2 /CH 4
                               +
                              h
                                                                      CO 2
                 3 2   VB  Semiconductor                     O 2      H 2 O
            (A)                                    (B)





                       H 2 O     O 2                        H 2 O  C x H y O z
                    Photocathode       Anode             Photoanode          Photocathode
                       CO 2



                                                                     H 2 O
                                H 2 O
                       C x H y O z
                                                            O 2
                                                                     CO 2
            (C)                                    (D)
           Fig. 4.5  (A) Electronic band structure for solar fuel generation (water splitting and CO 2
           reduction). (B–D) the different configurations that apply to solar fuel generation (B: photoanode
           half cell; C: photocathode half cell; and D: photoanode/photocathode full tandem cell).

              In a PEC cell, the practical photocurrent J is thereby determined by

                       h
               J =  J max ´ =  J max  ´h abs  ´h sep ´h inj                 (4.7)
           where J max  accounts for the maximum photocurrent for photoelectrodes, which is de-
           termined by the band gap of the semiconductor.
              Among these efficiencies, η abs  reflects the capability of photoelectrodes to absorb
           light and is decreased by the light reflection and transmission [14,44,45]. Narrow band
           gap semiconductors are thereby highly desired for harvesting sunlight with a broad
           wavelength range. For a single material, either geometrical engineering (such as pat-
           terning and increasing the thickness, etc.) or band energy engineering (by controlling
           defects and/or alien atom doping) is helpful for increasing η abs . The former works
           in the original absorption wavelength range of the semiconductor, whereas the latter
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