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Energy band engineering of metal oxide for enhanced visible light absorption  61

           W [6,46,53]. Large overpotentials are required for BVO photoanodes because of their
           poor water oxidation kinetics and their lower conduction band, as compared to the H 2
           evolution potential [54,55]. A co-catalyst such as Co-Pi is needed to accelerate an ox-
                                                                        2
           ygen evolution reaction. A high photocurrent was reported to be 2.73 mA/cm  at 0.6 V
           versus RHE on the nanoporous BiVO 4  photoanode with a FeOOH/NiOOH dual layer
           as the OER catalyst [46]. Recently, a more efficient BVO modified by electrochemi-
                                                                 2
           cal reduction was reported to have a photocurrent up to 3.2 mA/cm  with CoBi as the
           surface cocatalyst [56].

           4.4.2.4   Cu-based oxides
           Recently, Cu-based binary and ternary oxides attracted considerable interest as solar
           energy applications (Fig. 4.7) [57–62]. Generally, this class of oxides demonstrates
           a p-type semiconductor nature, which is used as photocathodes for the reduction of
           water and CO 2  under the light irradiation.

           Cuprous oxide (Cu 2 O)
           Cu 2 O is a conventional p-type semiconductor with a direct band gap of around 2.1 eV,
           which corresponds to a maximum STC efficiency of 15.9% and a maximum photo-
                             2
           current of 12.9 mA/cm . Its VB and CB straddle the water red-ox potentials, and the
           CB is more negative than the hydrogen evolution potential by −0.7 V (Fig. 4.7), which
           could provide a large driving force to thermodynamically split water into hydrogen
                                                                         2
                                                                      5
                                                                           −1 −1
           and oxygen. Cu 2 O has a high charge carrier mobility of up to ∼1.8 × 10  cm  V  s
           (reported in high quality single crystal Cu 2 O) [57,63]. Cu 2 O has an optical penetra-
           tion depth greater than 1 μm, but an electron diffusion length of about 200 nm, which
           like hematite and BVO means there is a large trade-off between light absorption and
           charge carrier diffusion [6,60]. The fatal weakness for Cu 2 O is that it is not thermo-
           dynamically stable in aqueous solutions because the red-ox couple for the reduction
           of Cu 2 O to Cu lies within the band gap and it undergoes self-reduction under aqueous
           conditions [60]. As a result, a protective layer is needed to insulate the Cu 2 O electrode



              –1.5                                                 Ta 5d  0
                                                             Ta 5d 0    CO /CO
             Potential (V) vs. RHE –1.0  Cu 3d 9  V 3d  Nb 4d 0         CO /COOH –
                  Cu 4s
                                                          0
                                                       Nb 4d
                                 5
                              Fe 3d
                                        7
                                     Rh 4d
                                             0
              –0.5
                                                                          2
                                                                          2
              0.0
                                                                         +
                                                                        H /H
                                                                           2
                                                                        CO /CH
              0.5
                                                                          2
                                                                             4
              1.0
                                           Cu
                                                        Cu
                               Cu
                                                 Cu
                                                                           2
                                                                         2
              1.5  Cu    Cu   Linear     Tetrahedral Octahedral  Tetrahedral  Cu  O /H O
                  Linear  Tetrahedral  Cu                     Cu
              2.0                    Linear                  Linear  Linear
                  Cu O   CuO  CuFeO 2  CuRhO 2  Cu VO 4  CuNb O 8  Cu Nb O 21  Cu Ta O 19 Cu Ta O 30
                    2
                                            3
                                                               7
                                                             3
                                                                   5
                                                                    11
                                                         8
                                                       2
                                                   3
           Fig. 4.7  Conduction and valence band positions of several Cu-based binary and ternary
           oxides, as compared to the redox potentials of H 2 O and CO 2 .
           Reproduced with permission from I. Sullivan, B. Zoellner, P.A. Maggard, Copper(I)-based
           p-type oxides for photoelectrochemical and photovoltaic solar energy conversion, Chem.
           Mater. 28 (2016) 5999–6016. Copyright © the American Chemical Society.
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