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68                                 Multifunctional Photocatalytic Materials for Energy

         range, that is, photon energy greater than the band gap of the semiconductor [87]. This
           enhancement works suitably on metal oxide semiconductors with a trade-off between
         the light absorption and charge carrier diffusion. In a representative photoelectrochem-
         ical cell set up in Fig. 4.11C, hematite nanowire array grown in SPP Au hole array was
         used as the photoanode for water splitting [91]. Ten-fold increase in the photocurrent
         at 1.23 V versus RHE was achieved compared to hematite nanowire array photoanode
         on bare FTO, which originates from both photonic and plasmonic energy transfer.
         Photonic enhancement was demonstrated as coming from the SPP mode supported on
         the Au hole array/hematite nanowire array, where under resonance, the incident light
         was guided and concentrated into the hematite nanowire array above the band-edge of
         hematite, which makes hematite nanowires act as an optical fiber to improve the light
         absorption [91].

         4.5.4.2   Hot electron injection
         As the metal particle size becomes smaller (<50 nm), absorption dominates surface
         plasmon resonance. The absorbed photon energy excites the conduction electrons in
         the plasmonic metal to become highly energetic electrons, also known as hot elec-
         trons, as shown in Fig. 4.12A [86]. If a hot electron has an energy greater than the





                  e –               1.0
                     j SB         E C                 Ag   Cu   AI  AZO
                  w                                   Au   RuO 2  ITO
                 –  h                                                   1.5
            E F
                  h +             E V
                                     Extinction   n = 10 ×
          (A)                                                           1.0
                                                   20
                          e –                     10  cm –3  n = 8.0 × –3   Solar spectral irradiance AM1.5 (W m –2  nm –1 )
                                                          20
                                                        10 cm
                  Excite  PIRET                                   n = 4.0 × –3  0.5
                                                                   20
                                                                  10  cm
                                                                n = 2.0 ×
                                                                 20
                                                                10  cm –3
                          h +       0.0                                 0.0
                                         500    1000    1500   2000   2500
          (C)   Metal  Semiconductor  (B)           Wavelength (nm)
         Fig. 4.12  Plasmonic metal nanoparticles enhancing the light absorption to the adjacent
         semiconductors by hot electron injection and plasmon-induced resonance energy transfer.
         (A) Plasmon excitation and the hot electron injection; (B) Optical extinction of metal (Al, Ag,
         Au, and Cu) and conducting oxides (RuO 2 , AZO, and ITO) plasmonic nanostructures. The
         solar irradiance spectrum is plotted in the background; and (C) Mechanism for the plasmon-
         induced resonance energy transfer.
         Reproduced with permission from C. Clavero, Plasmon-induced hot-electron generation
         at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices. Nat.
         Photonics 8 (2014) 95–103; S. Cushing, N. Wu, Progress and perspective of plasmon-
         enhanced solar energy conversion, J. Phys. Chem. Lett. 7 (2016) 666–675. Copyright ©
         Nature publishing group and the American Chemical Society.
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