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FUNDAMENTALS                             CH. 1 BASIC PROPERTIES AND MEASURING METHODS OF NANOPARTICLES

                       (a) Semiconductor        (b) Metal





                      Conduction band
                                                                  Energy                Energy
                    Energy  Band gap    Energy





                       Valence band

                                                                          D(E)                  D(E)
                                                                 (a) Bulk semiconductor  (b) Nanostructured semiconductor
                            D(E)                 D(E)
                                                                 Figure 1.13.2
                  Figure 1.13.1                                  Density of states for the (a) bulk and (b) nanostructured
                  Band structures of (a) semiconductor and (b) metal.   semiconductor particle.

                  direct bandgap conserving momentum and indirect  shielded by the effect of the large dielectric constant of
                  bandgap. In most cases, the minimum of the conduc-  a semiconductor. For that reason, the bound energy of
                  tion band locates above the maximum of the valence  an exciton becomes much smaller than that of a hydro-
                  band in momentum space. Therefore, the absorption  gen atom. That is, the activity of an exciton extends
                  spectra of photon can be understood in view of the  over multiple atoms. The larger band gap that a semi-
                  direct bandgap transition. For the interband transition,  conductor has, the more difficult it is to polarize, the
                  generation of the electron and hole is an elementary  smaller its dielectric constant gets and the more stabi-
                  excitation and an optical spectrum mainly depends on  lized is an exciton. Namely, an ionic semiconductor
                  the density of states.                         generally has a larger band gap and is harder to polar-
                    When an electron is confined in a nanostructured  ize than a covalent semiconductor. Accordingly, in the
                  semiconductor, its band structure changes markedly.  former, an electron and a hole tend to approach one
                  Since an electron is quantized in the thickness direc-  another and, optical transition readily occurs; therefore,
                  tion in a nanostructured sheet, the electronic density  an exciton is dominant.
                  of states concentrates at particular energy levels, as  The electronic density of states is discretized in
                  depicted in Fig. 1.13.2. For that reason, the condition  nanostructured semiconductor particles because of the
                  of photoexcitation differs. Assume a nanostructured  spatial confinement. In that case, the condition of an
                  semiconductor particle of several nanometer scale for  exciton is determined by the competition of the spatial
                  which travel of an electron is limited in all three  confinement and the Coulomb interaction. Since the
                  dimensions. The electron is therefore confined in the  semiconductor becomes increasingly smaller, the mag-
                  region; its density of states is discretized. For such  nitude of the Coulomb interaction extends over a bulk
                  nanostructured semiconductors, semiconductor   crystal, but the increase of the confinement energy pre-
                  nanoparticles like CdSe and ZnS, are anticipated for  vails. Accordingly, the smaller it gets, the less the rela-
                  use as novel luminescent materials.            tive contribution of the Coulomb interaction becomes
                    Strong Coulomb interaction between an electron and  and the spatial confinement becomes dominant. In a
                  a hole establishes a mutually bound state, which  region with a high obstacle potential and strong con-
                  reduces excitation energy by their binding energy. Such  finement, electrons and holes are no longer freely
                  a couple in the bound state is referred to as an exciton.  mobile. It is therefore impossible to approximate an
                  Light absorption by an exciton requires less energy  exciton as a particle that is similar to a hydrogen atom.
                  than a band gap. The contribution to optical absorption  On the other hand, conduction bands of a conductor
                  of interband transition and an exciton depends strongly  (metal) are partially filled with electrons; no gap exists
                  on the combined states of atoms in crystals. The travel-  in electronic excitation. Conducted electrons in metal
                  ing behavior of an electron and a hole that are mutually  form a kind of plasma state, and the intraband transition
                  attracted by the Coulomb interaction is explained as  of conduction electrons is described as the collective
                  similar to the relationship between an electron and a  motion of free electrons. The oscillation of electrons by
                  proton in a hydrogen atom. The Coulomb interaction is  this collective motion, in other words, the repetitive

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