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Photodiodes and Receivers



                                                                   Photodiodes and Receivers  109


                                       Electric field
                                   Direction of electron travel

                                        Electron in
                                -     conduction band

                                                            Electron
                                   Electron      Energy    energy (eV)
                                   excitation    gap E g

                      Incident  +    Hole in valence band
                      photon

                                   Direction of hole travel
                      Figure 7.2. A photon gives up its energy to excite an electron
                      from the valence band to the conduction band.


                        An incident photon is able to boost an electron to the conduction band only if
                      it has an energy that is greater than or equal to the bandgap energy. This means
                      that beyond a certain wavelength, the light will not be absorbed by the material
                      since the wavelength of a photon is inversely proportional to its energy. The
                      longest wavelength at which this occurs is called the cutoff wavelength, which
                      is designated by λ c . If E g is the bandgap energy expressed in electron volts (eV),
                      then λ c is given in micrometers by

                                                     hc  1 240
                                                          .
                                                 λ c                                     (7.1)
                                                     E g   E g
                      Here h   6.6256   10  34  J s is Planck’s constant, and c is the speed of light.
                      There also is a lower bound on the wavelength at which the photodetection
                      response cuts off. This is a result of high-energy photons being absorbed very
                      close to the photodetector surface. Since the lifetimes of the electron-hole pairs
                      that are generated close to the surface are very short, they recombine quickly
                      before they can be collected by the photodetector circuitry. Consequently a photo-
                      detector has a certain wavelength range over which it may be used.

          7.1.2. Photodetector materials
                      The choice of a photodetector material is important since its bandgap proper-
                      ties determine the wavelength range over which the device will operate. Early
                      optical fiber systems used photodetectors made of silicon (Si), germanium
                      (Ge), or gallium arsenide (GaAs), since these materials were available and
                      respond well to photons in the 800- to 900-nm region. Of these, Si and GaAs are
                      used most widely, since Ge has higher noise levels than other materials.
                      However, Si and GaAs are not sensitive for wavelengths beyond 1100nm
                      where long-distance communication links operate. Therefore the ternary and


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