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An Intr oduction to Or ganic Photodetectors     199

               although the costs of these devices tend to be much higher than
               those based on CdS. †
                   Just as all diodes are photoactive to some extent, so too are all
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               transistors. Phototransistors  operate in a similar way to photodiodes
               except, due to their transistor operation, they exhibit current gains of
               up to a few thousand. (Note that this is a conventional amplification
               effect as opposed to the low-noise internal gain exhibited by PMTs
               and APDs.) In operation, a voltage is applied between the collector
               and the emitter, and when the transistor is illuminated, a photocur-
               rent flows between the base and the collector, which in turn causes an
               amplified current to flow between the collector and the emitter. Pho-
               todarlingtons are closely related devices, comprising a photoactive
               input transistor followed by a secondary transistor, which can pro-
               vide increased levels of current gain upward of several hundred
               thousand. When phototransistors and photodarlingtons are used in
               conjunction with suitable load resistors, their built-in gain allows
               them to drive TTL and CMOS logic gates directly, which simplifies
               circuitry considerably. However, the need for an applied bias between
               the base and the collector gives rise to a constant (dark) current even
               in the absence of light. This is usually several nanoamperes and sets
               an approximate lower limit for the detectable photocurrent. As well
               as having higher dark currents, phototransistors tend to exhibit
               slower response speeds and worse linearity than photodiodes, and
               suffer from significant device-to-device variability. In virtually all
               cases, superior performance is achieved by separating the detection
               and gain stages, using a photodiode for the former and a discrete
               amplifier for the latter (although this clearly entails some additional
               cost and circuit complexity).
                   The last kind of photodetector in common use is the charge-
               coupled device (CCD) (Fig. 6.5)  which forms the basis of virtually all
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               digital cameras and image sensors. The term CCD formally refers to
               the specific architecture that is used to shuttle charges around the
               sensor array rather than the individual photosensors themselves.
               CCDs were originally conceived in the 1960s as a new kind of
               memory circuit, but were soon applied to other tasks such as signal
               processing and imaging. Today they are no longer of interest as mem-
               ory elements (having been surpassed by a variety of superior tech-
               nologies), but they have evolved into the current solution of choice
               for imaging applications. In essence an imaging CCD is an array of
               metal-insulator-semiconductor photocapacitors, which collect and
               maneuver photogenerated charges. The CCD is usually ‘‘built’’ on a
               grounded p-type silicon substrate (the semiconductor) with a surface




               † Note, many countries are phasing out the heavy metals commonly used in
               photoresistors for environmental reasons.
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