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An Intr oduction to Or ganic Photodetectors     201

               for very large area applications, where they offer photoactive surfaces
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               of up to 5000 cm . On the negative side, PMTs require high operating
               voltages of several thousand volts, have relatively narrow spectral
               ranges, and are bulky, fragile, and expensive due to the need for vac-
               uum housing. APDs are compact solid-state alternatives to PMTs,
               although they exhibit markedly lower gains and bandwidths. They
               are often used when light levels are too high for photomultiplier
               tubes but too low for photodiodes. They too are very expensive. In
               contrast to PMTs and APDs, photodiodes have no internal gain and,
               for low light level measurements, usually require an external ampli-
               fier to increase the signal to a manageable level. As we shall see later,
               external amplification is a major cause of measurement noise, and
               photodiodes are therefore best suited to detection in fairly high light
               level conditions where amplifier noise is negligible. On the positive
               side, photodiodes are more robust than APDs and PMTs, have very
               low operating voltages and wide dynamic range, and are fairly cheap
               due to their simple fabrication. Phototransistors offer an integrated
               alternative to photodiode/amplifier combinations and are a good
               choice for fairly high light level applications where simplicity of
               design and low cost are important considerations, and high linearity
               is not required. Photoresistors are ideal for ultralow cost applications
               that do not require high levels of sensitivity, and for this reason tend
               to be the solution of choice for the toy industry where economy of
               fabrication is paramount. CCDs are the dominant technology for one-
               and two-dimensional sensor arrays, although photodiode arrays are
               gaining rapidly in importance. At present, there is little to distinguish
               CCD and diode arrays in terms of performance and cost. CMOS
               detectors have a slight edge in terms of responsivity and speed,
               whereas CCDs have a marginal advantage in terms of dynamic range
               and pixel uniformity.
                   The above discussion has highlighted the main types of photode-
               tectors in common use today, and it is natural to ask at this point
               whether there is really a need for a new detection technology at all.
               OPDs are photodiodes with no internal gain and so––in their current
               form at least––are unable to compete with PMTs and APDs in terms
               of sensitivity. They are also high-capacitance devices based on low-
               mobility materials and consequently exhibit slow response times
               compared to PMTs, APDs, and conventional inorganic photodiodes.
               On the other hand, their favorable processing characteristics may
               open up new applications that are currently unviable, e.g., in large-
               area light detection. The largest single-element photodetectors are
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               20 in PMTs, and the largest imaging arrays are ~1600 cm  amorphous
               silicon panels. Using printing techniques, it should be possible to cre-
               ate organic photovoltaic (OPV) devices of much larger area at greatly
               reduced cost. In addition, by fabricating OPV devices on flexible sub-
               strates, conformal photodetectors can be created that adapt to the
               shape of the surface on which they are mounted. A critical area where
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