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Power electronic control in electrical systems 165
Fig. 5.9 IGBT features: (a) circuit symbol; (b) equivalent circuit; (c) device layer structure; and (d) i±v characteristics.
Fig. 5.10 Types of IGBTs: (a) punch-through IGBT; and (b) non-punch-through IGBT.
5.2.8 MOS-controlled thyristor
The MCT is a hybrid device that combines characteristics of two families of tech-
nologies, namely MOS and thyristor.
