Page 68 - Pressure Swing Adsorption
P. 68

42   PRESSURE SWING ADSORPTION   FUNDAMENTALS  OF ADSORPTION            43

 such  c1rcumstances  the  sorption/desorpt1on rate  depends on  both  the  resis-  Uotake:
 tance  to  mass  transfer  and  the  time  dependence  of  the  local  gas-phase
                             -3k ; \
                 ii
 concentration.  The  modeling  of such  systems  ts  considered  in  Section  2.4.   -=  !  -exp  -r)   (2.37b)
                            f
 However,  in  order to  understand  their behavior, 1t  is  helpful first  to consider   \   e
 the simpler problem .of sorot10n  m  a smgte adsorbent particle subjected  to  a
 step change m surface concentration. To do this 1t  1s  necessary to consider m
 sequence the various oossible mass transfer resistances that may control  the   2.3.6  Micropore  Diffusion
 sorotion  rate.  Of course in  practice more  than one of these resistances may
           We  assume  mstantaneous  eouilibrallon  at  the  external  surface  with  the
 be  significant,  but  in  order  to  avoid  undue  complex1ty  we  assume  here   approach to equilibrmm m  the mtenor of the sphencal particle controlled bv
 spherical  adsorbent  oart1cies  and  a  smgle  rate-controlling  process.  We  as•   Fickian  diffusion  with  the  diffus1v1ty  defined  on  the  basis  of the  gradient of
 sume a  general expression for the eauilibnum isotherm {q*  = f(c)} and in  all
           the adsorbed  ohase concentratmn. Local  sorot1on  rate:
 cases given  here the assumed initial and boundary conditions are:
 , < 0,   q  = c =  0; t  > 0,   c = c ,   alR,  =  Kc 0   (2.35)    (2.38a)
 0

           Uptake:
 2.3.4  External Fluid Film Resistance
 Sorpt10n  rate:                                                     (2.38b j
 dii   3k,   •
 di =  R  [ Co  - c  ],   c*  =f(li)   (2.36a)
 p         At short times this expression  1s  approximated  by:
 Uptake:         q,  _  6  JD,;   Dt
                                3
                q,,,,  -,;v1r - 7i                                    (2.39)
 ii  =   1  _  exp(  ~3k,i ),   (2.36b)   '
 qu   .  RP  .   This expression is accurate to within 1 % for m,/m""  < 0.85 (or Dct/r'; < 0.4).
 The mass transfer coefficient (k,) depends m general on the hydrodynamic   The  first  term  alone  provides  an  adequate  approximation  for  the  initial
 condihons but m the special case of a stagnant gas (Sh  =  2.0)k, = Dm/R,. In   region  (m,lm~ < 0.15  or  D,t /r; < 0.002).  Confdrm1tv  with  these  exores-
 practice  the  external  fluid  film  resistance  1s  normally  smaller  than  the   sions  is  illustrated  m  Figure 2.17.  The  difference  between  the  fonns  of the
 mternal  (intraparticle or mtracrystalline) diffusional  resistances;  so  this  pro-  uptake  curve  denvect  from  the  diffusion  model  and  the  surface  resistance
 cess  1s  seldom  if  ever  rate  controlling,  although  in  many  systems  it  makes   models (Eq. 2.37 or 2.38)  1s  illustrated  m  Figure 2.20, while  the  temperature
 some contribut10n to the overall resistance.   dependence of D 1s  shown  m  Figure 2.18.
                          0
              The  situation  1s  more  complicated  m  binarv or muit1component  svstems,
            smce It  is  then necessary to take account of the effect of component  B  on  the
 2.3.5  Solid Surface Resistance
            chem1cal  ootent1al  of component  A.  As  the  simtilest  realistic  example  we
 If mass transfer resistance 1s  much higher at  the surface than in  the intenor   consider an idealized system m which the cross terms m  the flux equation can
 of the  adsorbent  particle,  for  example,  as  a  result  of partial  closure  of the   be  neglected  and  m  which  the  mobility  1s  mdependent of composttmn.  The
 pore mouths, the concentration profile will  show a steplike form with a sharp   detailed  analysis  has  been given  by  Round,  Newton,  and  Habgood  48   and  bv
 change m concentratt0n at the surface and an essentially constant concentra-  Karger and  Biilow.  49   We have for  the  fluxes:
 tion  through  the  mtenor  regton.  In  this  situation  the  expression  for  the
 uotake rate ts similar to the case of external film  resistance but with the mass   -D  (dlnpA)ilqA   (2.40)
                         OA  dlnqA   i!z
 transfer  coeffident  ks  representmg  the  diffusional  resistance  at  the  solid
 surface.  Sorotion rate:
                N  =  -D  /dlnp.)aq.
                  8      08
 da   3k,   _              \dlnqn  oz
 dt  =  R(qo - q),   (2.37a)
 p          If  the  eauilibnum  isotherm  1s  of  binary  Langmuir  torm  (Ea.  (2.13),  the
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