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Electron-Electron
                             where  τ
                                     is the phonon lifetime or relaxation time, which in turn is the
                                   p
                             the inverse of the phonon scattering rate.
                             Clearly, (7.5a) predicts that  κ   is temperature dependent, with three
                             potential sources. We do not expect the phonon velocity  v   to show a
                                                                             p
                             strong temperature dependence for the solid state, since its value should
                             be proportional to the root of the material density. In Section 2.4.2 we
                             have seen that the specific heat at high temperatures tends to a constant
                             value c  . We are thus left with the phonon lifetime as only temperature-
                                   v
                             dependent influence at high temperatures. No simple theoretical explana-
                             tion of these scattering processes is possible, and experimental evidence
                             suggest that  κ ∝  T – β   for  1 ≤  β ≤  2  . This makes sense, since we expect
                             that as the number of generated phonons increase due to the raised tem-
                             perature, so does the number of inter-phonon scattering events, and hence
                             the thermal conductivity should decrease with raised temperature.




                             7.2 Electron-Electron

                             For this section we assume that all electron-electron interaction of
                             ground state electrons has already been considered in calculating the
                             occupied ground states, i.e., the valence band structure. Therefore, we
                             only consider the interaction of excited electrons. The density of excited
                             electrons is assumed to be this low that a single electron description is
                             justified. Remember that this single electron description allows the
                             description of a completely occupied valence band missing one electron
                             as a single defect electron or hole in the same manner as for a single elec-
                             tron in the conduction band.

                             In the light of the above simplifying assumptions we calculate the transi-
                             tion rates between two electronic states as they enter the Boltzmann
                             transport equation (6.2) by means of the Fermi golden rule (3.82). For the
                             electron-electron interaction this yields a nonlinear term in the Boltz-
                             mann transport equation. For this section we only want to describe the



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