Page 335 - Sensors and Control Systems in Manufacturing
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Advanced Sensors in Pr ecision Manufacturing
                             Photodiodes offer many conveniences and advantages that make   291
                          them very practical for a wide range of applications:

                              •  They can easily measure from picowatts to milliwatts of opti-
                                 cal power.
                              •  They come in standard packages, or the package can be tooled
                                 to the application.
                              •  Depending on the semiconductor material used, they can
                                 detect wavelengths from 190 to over 2,000 nm.
                              •  They are small and lightweight.
                              •  Almost any photosensitive shape can be fabricated for small
                                 capital investment as low as $3,000 for tooling.
                              •  They have very reproducible sensitivity.
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                              •  Very large areas can be fabricated: > 10 cm .
                              •  They can be very responsive, with rise-times as fast as
                                 10 picoseconds.
                             If noise presents an obstacle when measuring a few picowatts of
                          light with a standard photodiode, consider the advantages of an ava-
                          lanche photodiode (APD) which offers a current gain internal to the
                          photodiode structure of up to 100 times.
                             Photodiodes generally require a pre-amplifier to give signal gain
                          for applications to detect picowatts of light power. But for high optical
                          power of <10 microwatt levels, a simple load resistor configuration
                          can give adequate performance and TTL-compatible voltage swings.
                             Silicon based photodiodes cover the wide range of wavelengths
                          from 190 to 1100 nm. The lower limit is set by absorption of ultravio-
                          let light in air. Germanium (Ge) photodiodes overlap the silicon
                          response spectrum and are usable to about 1600 nm. Semiconductors
                          that are compounds of gallium, arsenide, indium, antimonide, and
                          phosphorous can be specially fabricated to cover small sections of the
                          190-to-2000-nm spectral range. For instance, the fiber optics industry
                          uses indium-gallium-arsenide “InGaAs” detectors for the 800 to 1800 nm
                          range. More exotic and expensive photodiodes can sense energy
                          much further out in the IR spectrum.
                             Photodiodes are widely used in high-tech societies, in applica-
                          tions ranging from sensors for door openings, assembly line controls,
                          load levelers in luxury cars, to personal blood sugar meters for diabetics,
                          sun-tan exposure meters, smoke detectors, x-ray baggage inspection
                          systems, and even cranial pressure sensors for head injury patients.


                     6.6  Phototransistors and Photodarlingtons
                          Phototransistors are transistors designed to capture light and are
                          assembled in a transparent package. They are often more convenient
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