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Industrial Sensors and Contr ol
                             In order to characterize APD response, one must specify APD   365
                          responsivity (in amps/watt) at a given operating voltage. However,
                          because of diode-to-diode variations in the exact gain voltage curve
                          of each APD, the specific operating voltage for a given responsivity
                          will vary from one APD to another.
                             Manufacturers should therefore specify a voltage range within
                          which a specific responsivity will be achieved.
                             An example of a typically correct specification for diode respon-
                          sivity, in this case for an InGaAs APD, is as follows:

                                      R    (1300 nm) = 9.0 A/W,
                                       MIN
                                                V  = 50 V to 90 V,
                                                 OP
                                                 M = 10




                     7.23  Dark Current and Noise Current
                          As can be seen from the noise equation (Equation 2), the total APD
                          dark current (and the corresponding spectral noise current) is only
                          meaningful when specified at a given operating gain.
                             Dark current at M = 1 is dominated by surface current, and may
                          be significantly less than

                                                  I   × M
                                                   DB
                             Since APD dark and spectral noise currents are a strong function
                          of APD gain, these should be specified at a stated responsivity level.
                             An example of a typically correct specification for diode dark
                          current and noise current—in this case, for an InGaAs APD—is as
                          follows:

                                        I  (R = 9.0A/W) = 10 nA (max),
                                         D
                                                   M = 10
                              i  (R = 6.0 A/W, 1 MHz, 1 Hz BW) = 0.8 pA/√Hz (max),
                              N
                                                   M > 5


                          7.23.1  Excess Noise Factor
                          All avalanche photodiodes generate excess noise due to the statistical
                          nature of the avalanche process. This excess noise factor is generally
                          denoted as F.
                             As shown in the noise equation (Equation 2), √F is the factor by
                          which the statistical noise on the APD current (equal to the sum of the
                          multiplied photocurrent plus the multiplied APD bulk dark current)
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