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are in essence analog measurements, while the latter is in essence a binary-type measurement, since the
                                 sensed quantity is typically the frequency of vibration. Since the resonant-type sensors measure frequency
                                 instead of amplitude, they are generally less susceptible to noise and thus typically provide a higher
                                 resolution measurement. According to Guckel et al., resonant sensors provide as much as one hundred
                                 times the resolution of analog sensors [33]. They are also, however, more complex and are typically more
                                 difficult to fabricate.
                                   The primary form of strain-based measurement is piezoresistive, while the primary means of displace-
                                 ment measurement is capacitive. The resonant sensors require both a means of structural excitation as
                                 well as a means of resonant frequency detection. Many combinations of transduction are utilized for
                                 these purposes, including electrostatic excitation, capacitive detection, magnetic excitation and detection,
                                 thermal excitation, and optical detection.

                                 Strain

                                 Many microsensors are based upon strain measurement. The primary means of measuring strain is via
                                 piezoresistive strain gages, which is an analog form of measurement. Piezoresistive strain gages, also
                                 known as semiconductor gages, change resistance in response to a mechanical strain. Note that piezo-
                                 electric materials can also be utilized to measure strain. Recall that mechanical strain will induce an
                                 electrical charge in a piezoelectric ceramic. The primary problem with using a piezoelectric material,
                                 however, is that since measurement circuitry has limited impedance, the charge generated from a mechan-
                                 ical strain will gradually leak through the measurement impedance. A piezoelectric material therefore
                                 cannot provide reliable steady-state signal measurement. In constrast, the change in resistance of a
                                 piezoresistive material is stable and easily measurable for steady-state signals. One problem with piezore-
                                 sistive materials, however, is that they exhibit a strong strain-temperature dependence, and so must
                                 typically be thermally compensated.
                                   An interesting variation on the silicon piezoresistor is the resonant strain gage proposed by Ikeda et al.,
                                 which provides a frequency-based form of measurement that is less susceptible to noise [34]. The resonant
                                 strain gage is a beam that is suspended slightly above the strain member and attached to it at both ends.
                                 The strain gage beam is magnetically excited with pulses, and the frequency of vibration is detected by
                                 a magnetic detection circuit. As the beam is stretched by mechanical strain, the frequency of vibration
                                 increases. These sensors provide higher resolution than typical piezoresistors and have a lower temper-
                                 ature coefficient. The resonant sensors, however, require a complex three-dimensional fabrication tech-
                                 nique, unlike the typical piezoresistors which require only planar techniques.

                                 Pressure

                                 One of the most commercially successful microsensor technologies is the pressure sensor. Silicon micro-
                                 machined pressure sensors are available that measure pressure ranges from around one to several thou-
                                 sand kPa, with resolutions as fine as one part in ten thousand. These sensors incorporate a silicon
                                 micromachined diaphragm that is subjected to fluid (i.e., liquid or gas) pressure, which causes dilation
                                 of the diaphragm. The simplest of these utilize piezoresistors mounted on the back of the diaphragm to
                                 measure deformation, which is a function of the pressure. Examples of these devices are those by Fujii
                                 et al. [35] and Mallon et al. [36]. A variation of this configuration is the device by Ikeda et al. Instead
                                 of a piezoresistor to measure strain, an electromagnetically driven and sensed resonant strain gage, as
                                 discussed in the  previous section,  is utilized [37].  Still another variation on the same theme is the
                                 capacitive measurement approach, which measures the capacitance between the diaphragm and an
                                 electrode that is rigidly mounted and parallel to the diaphragm. An example of this approach is by Nagata
                                 et al. [38]. A more complex approach to pressure measurement is that by Stemme and Stemme, which
                                 utilizes resonance of the diaphragm to detect pressure [39]. In this device, the diaphragm is capacitively
                                 excited and optically detected. The pressure imposes a mechanical load on the diaphragm, which increases
                                 the stiffness and, in turn, the resonant frequency.

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