Page 175 - Wire Bonding in Microelectronics
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Negative Effect
Contributing Causes Corrective Action on wire Bonds a Agitated DI wash B,R Static DI wash Possible argon sputtering B,R>6 atomic % May leave fluorocarbon polymer films, F or Cl R<6 atomic % Complete removal B,R,C Dichlorobenzene residue DI water with surfacant B,R Cl in water Use di
Source of Contamination Silox etch (Fluoride) F or Cl residue on pads from RIE Photo resist stripper Wafer sawing in city water Trichlorethane (TCA) CF4/0 2 plasma clean Cl from burn-in oven chloroprene gasket Cl from plastic Br from encapsulation fire retardant See Refs. [5
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