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54 CHAPTER 1 Solar Cells and Arrays: Principles, Analysis, and Design

Table 1.5 Comparison Between Extracted Electrical Performance
Parameters for Two Different Emitter Sidewall Surfaces
Aluminum Is Deposited
D D
n Sidewall Surface Is on n Emitter Sidewall
Parameter Passivated with SiO 2 Surface
I s (A) 2 10 18 1.9 10 17
I sc (V) 6.3 6.2
J sc (A) 35 34.4
V oc (V) 0.54 0.52
FF (%) 80.8 80.7
h c (%) 11.7 11.1

þ
surface treatment on V oc . It is obvious that V oc is increased when the n sidewall sur-
face is passivated with SiO 2 . The reason is that the SiO 2 passivation decreases the
gradient of the excess hole distribution. Thus, the reverse saturation current de-
creases, which in turn increases V oc .

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