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where  Rl is the equivalent load  resistance (usually)  in a parallel LC  tank circuit.  If

            the  mixer's  output  current  is  connected  to  a  tapped  transformer,  then  the  turns
            ratio  must be  taken  into consideration.  For example,  many  IF transformers  have  a
            turns  ratio  of 3: 1 in  the  primary  winding.  If the  IF transformer  has  an  equivalent
            parallel  resistance of 200 k


                                                                  2
            , then the resistance at the low-side tap is (1/3 )  X  200  k


            , or 22.2  k


             = Rl.  AliSO  note  that  the  output  signal  at  the  secondary  winding  of the  IF
            transformer will  be lower than at the primary winding owing to the step-down ratio.
            Before  I  end  this  chapter,  I  offer  Table  14-5,  which  lists  various  conversion

            transconductances  of different  devices  for  comparison.  For  the  one-transistor
            mixer,  assume  that the  driving  voltage  at the  base-emitter junction  is above  125
            mV peak,  which translates to a conversion transconductance of about 90  percent of
            the small-signal transconductance of a bipolar transistor.
            As  can  be  seen  in Table 14-5, the two vacuum  tubes,  1R5  and  12BE6, which  were
            used  in superheterodyne  radios,  have  conversion  transconductances  very  close  to

            that of a bipolar transistor running at a collector current of 10 JJA.  This fact will  give
            you  a  hint as  to  how  the  ultralow-powered  superheterodyne  radios  of Chapter  9
            were designed.
            TABLE  14-5 Conversion  Transconductances  of Transistors,  Vacuum  Tubes,  and
            MOSFETs



             Device                                           Conversion Transconductance

             Transistor at 1 mA                               0.0345  mho
             Translstor at 100 ~A                             0.00345 mho

             TranSlstor at 10 !-lA                            0.00035  mho
             1  R5  pentagrid tube at 5 mA                    0.00030 mho
             128E6 pentagrid tube at 10 mA                    0.00047 mho

             40604 dual-gate MOSFET  at 10 mA                 0.00280 mho
                                                   References

            1. Class notes EE140,  Robert G. Meyer.  UC  Berkeley, Fall  1975.
            2. Class notes EE240,  Robert G. Meyer.  UC  Berkeley, Spring  1976.
            3.  Paul  R.  Gray  and  Robert  G.  Meyer.  Analysis and Design  of Analog Integrated
            Circuits.  New York: John Wiley & Sons (any edition).

            4.  Kenneth  K.  Clarke  and  Donald  T.  Hess.  Communication  Circuits:  Analysis and
            Design.  Reading: Addison-Wesley,  1971.
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