Page 238 - Chalcogenide Glasses for Infrared Optics
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214    Cha pte r  Ni ne

              was designed and built. The chambers are all made entirely of quartz,
              assembled in the TI glass shop before placement in the three furnaces.
              The two source furnaces are controlled at temperatures above that of
              the furnace around the center reaction zone. The two chambers serving
              as sources are constructed so the saturated solutions come from the
              bottom and contain no solid CdTe. The entire apparatus, furnaces
              and reaction chamber, is placed on a rocking platform and rocked so
              that solution liquid is moved back and forth across the substrates. As
              the hot liquid leaves the source chamber, it cools and is depleted of
              CdTe, adding to the layer on the substrates. At first the rocking rate
              was 2 times per minute over a period of hours. One reaction run was
              18 h with the source temperatures at 900°C and reaction chamber at
              700°C. The results were very disappointing. The substrates did not
              grow into a plate and, in fact, dissolved to a great extent. The conclu-
              sion reached was that the temperature differences between substrate
              and solutions were much too great and the rocking speed was too
              fast. Small conventional runs were resumed to establish the proper
              growth conditions and to demonstrate that single-crystal growth
              across the substrates would occur. Methods used in forming 2 in ×
              2 in mosaic CdTe substrates are illustrated in Fig. 9.3. Stockbarger
              formed CdTe crystals squared up by sawing and then cut into
              squares or long strips. If the beginning crystals are all single, a square
              substrate is formed in one case or a substrate is formed from long
              sawed strips. Even if the material is not all single, good results may
              still be expected if the poly is large-grain. Ideally, if the crystal is
              completely single, an orientation may be found that that is favorable
              for CdTe growth. The graphite holder for the substrates shown in
              Fig. 9.3 has graphite strips at both ends to hold the substrate in place
              because its density is less than that of the solution and it would float
              away as the solution moved across. In all the runs, it was found the
              substrate pieces did not grow together. One possibility to be pur-
              sued was to alloy the pieces together before starting. Otherwise, the
              Te-rich solution flows into the cracks between the pieces, preventing
              growth.
              9.2.1  Conclusions Concerning This Effort

                 1.  High-resistivity layers of CdTe will grow from Te solutions if
                    Cd concentration is 20 percent or greater in the temperature
                    range of 700 to 750°C.
                 2.  The volatility of Te is such that a closed system must be used
                    to avoid Te loss and solution concentration changes.
                  3.  Results indicate it is necessary to alloy mosaic pieces together
                    prior to layer deposition attempts.
                 4.  The temperature difference between solution and substrate
                    must be kept low to maintain equilibrium conditions.
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