Page 141 - High Power Laser Handbook
P. 141

110   Diode Lasers                             Semiconductor Laser Diodes    111


                      where W is the stripe width, R is the front facet reflectivity, d is the
                      quantum well thickness, and G is the transverse optical confinement
                      factor such that d/G is the equivalent spot size. Broad-area lasers are
                      able to achieve high output powers due to a wide stripe width W.
                      P COMD  is a function of the active region material and facet passivation
                                                                   2
                      techniques. 11–13  A P COMD  value as high as 24 MW/cm  was reported
                      for CW operation of broad-area InGaAs/AlGaAs laser diodes lasing
                               14
                      at 940 nm.  The transverse size of the optical mode can be increased
                                                  15
                      using large optical cavity designs,  which provide a low optical con-
                      finement  factor  G.  The  optical  confinement  factor  can  be  further
                      reduced  by  designing  an  asymmetric  waveguide  structure   and
                                                                          16
                      using an optical trap layer.  Another design tool for achieving high
                                             17
                      optical  power  is  to  increase  the  laser  cavity  length.  Larger  cavity
                      length leads to lower electrical and thermal resistances, which in turn
                      result in reduced heating, higher efficiency, and higher thermal roll-
                      over powers. Efficient operation of long cavity length lasers requires
                      low internal loss of less than 1 cm . State-of-the-art broad-area lasers
                                                  –1
                      with stripe widths of approximately 100 mm have 4 to 5 mm cavity
                      length and reach more than 20 W optical power in CW operation. 18–20
                      Reliable operating power for these lasers is rated in the 10 to 12 W
                      range. Figure 5.9 shows 26.1 W of CW power achieved from a 5-mm-
                      long, 90-mm-wide, 940-nm InGaAs/AlGaAs laser. 14
                         Continuous wave power is limited not only by COMD but also
                      by thermal rollover, as self heating results in decreasing efficiency.
                      Pulse mode operation eliminates self heating, and much higher pow-
                      ers can be achieved. Figure 5.10 shows power as high as 32 W for
                      20-ms  pulse  duration  and  1-kHz  repetition  rate  for  a  940-nm  laser
                      diode with a 100-mm emitting aperture. 21


                         30

                         25

                        Power (W) 20                                       2204

                         15
                                                                           3022
                         10

                          5

                          0
                            0        10         20        30        40
                                             Current (A)

                      Figure 5.9  Experimental rollover light current characteristics for lasers with
                      AlGaAs barrier series. 14
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