Page 143 - High Power Laser Handbook
P. 143
112 Diode Lasers Semiconductor Laser Diodes 113
T Heat sink = 25°C
12 50
10
40
8
Power (W) 6 30 Efficiency (%)
20
4
10
2
0 0
0 5 10 15 0 5 10 15
Current CW (A)
W = 90 µm, L = 4.5 mm W = 90 µm, L = 3.0 mm
Figure 5.11 Room temperature power-current CW characteristics at 808 nm
operating wavelength with different cavity lengths (L = 4.5 mm and L = 3.0 mm). 20
1200
5–8°C
800 1010 W
Power (W) 640 W
400
Double-side cooling
Single-side cooling
0
0 400 800 1200
CW current (A)
Figure 5.12 Light-current characteristics of a 940-nm bar (single-side,
double-side cooling). 24
