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3.3. Critical Components

                         Distributed feedback (DFB) laser

                                  P-AIGaAs             Grating

                                                      s Active
                                                       layer
                                  N-AIGaAs


                     Fig. 3.13. Basic structure of the distributed feedback laser.

       involved by using a wavelength-selective reflection. In general, a grating (a
       period structure) is fabricated into the laser cavity, as shown in Fig. 3.13. The
       only resonant wavelength is the wavelength that satisfies the Bragg condition;
       i.e.,
                                    2?zA = mA                        (3.42)

       where m represents the order of diffraction, A B represents the wavelength that
       satisfies the Bragg condition (Eq. [3.42]), A represents the period of the
       grating, and n is the refractive index of the cavity. A spectral linewidth less than
       <0.1 nm can be achieved by using this distributed feedback structure.

       Example 3.10. The band gap of the Ga 0 8A1 0 2As semiconductor laser =
       1.6734 eV. Calculate the output wavelength of this laser.
       Solve:

                                   , c .    he
                            = nv = /i - => / = — — 0.74 /urn.
                                    A       £,,

       Example 3.11. The forward current through a GaAsP red LED emitting at
       670 nm wavelength is 30 mA. If the internal quantum efficiency of GaAsP is
       0.1, what is the optical power generated by LED?
       Solve:

                           —>• number of electrons/second


                          v\ —> number of photons/second
                           e

                         h - —>• energy of each photon.
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