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3.3. Critical Components               i 91

            power. Mathematically, the mean square of shot noise determined
            current is


            where / is the average current generated by the detector, e is the electron
            charge unit, I d is the dark current (i.e., the current arisen from thermally
            generated carriers without light illumination), and A/ is the bandwidth
            over which the noise is being considered. Thermal noise (also referred to
            as Jonshon noise or Nyquist noise) arises in the load resistor of the
            photodiode circuit due to random thermal motion of electrons. Math-
            ematically, it can be written as

                                 /••/ \
                                 VNT/ — ~                            (3.44)
                                           R,
                                 23
            where k B = 1.381 x 1CT J/K is the Boltzmann constant, T is the absolute
            temperature, and R L is the resistance of the loading resistor. The thermal
            noise is proportional to the absolute temperature. This is why, in some
            cases, to reduce noise for very low light signal detection, we put the
            photodetector in liquid nitrogen (i.e., T = 77 K).
         Table 3.2 summaries typical performance characteristics of detectors.

       Example 3.13. The band gap energy of a PIN photodetector is 0.73 eV. Obtain
       the corresponding cutoff wavelength.
       Solve:
                                                         m s





                                     Table 3.2
       Material               Silicon        Germanium         InGaAs

       Types               PIN     APD     PIN     APD      PIN     APD
       Wavelength range (nm)  400- 1 100      800-1800        900 1700
       Peak (nm)           900     830     1550     1300    1300    1300
                                                            1550    1550
       Responsivity (A/W)  0.6    77-139  0.65-0.7  3-28   0.6-0.8
       Quantum efficiency (%)  65 90  77   50-55   55 75   60-70    60 70
       Gain (M)             1     150-250    1     5 40      1      10-30
       Bias voitage ( — V)  45-100  220    6-10    20 35     5       < 30
       Dark current (nA)  1-10    0.1-1.0  50-500  10-500   1-20     1 5
       Capacitance (pF)   1.2-3    1.3-2   2-5      2 5     0.5-2    0.5
       Rise time (ns)     0.5-1   0.1-2   0.1-0.5  0.5-0.8  0.06-0.5  0.1- -0.5
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