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                    Microtechnologies for Science Instrumentation Applications      133


                    traditional foundries. In addition, all magnetometers, which use ferromagnetic
                    materials have a limited dynamic range and the variation in magnetization requires
                    a calibration process. An interesting approach for space application, where large
                    current-carrying supply lines can change the magnetic environment around the
                    magnetic boom, would be the use of such a magnetometer with remote interroga-
                        25
                    tions.  Lorentz force-based magnetometers promise a high dynamic range with a
                    zero offset and wide linearity. They are based on the measurement of the deflection
                    of a MEMS structure with an AC or DC current flowing in it. One example is the
                    JPL device, 26  that uses DC current and measures the static deflection of a mem-
                    brane with conductors using a tunneling current as the transduction method. The
                    sensitivities of this device are in the order of mT. A more sensitive magnetometer
                    has been designed at JHU/APL, 2,24  based on a resonating ‘‘xylophone’’ bar, a few
                    hundred microns long and supported at the nodes where an AC current is supplied.
                    At the resonance frequencies, Qs for these devices in vacuum are in the order of 50–
                    100k, and small fields can generate a large magnitude of deflection. Devices etched
                    photolithographically from CuBe with lengths of a few millimeters have been
                    used to measure magnetic fields with sensitivities as low as 100 pT/Hz 1/2  using
                    optical beam deflection as the transduction method. Figure 7.5 shows a device
                    surface micromachined in polysilicon using the MUMPs process. The sensitivity of
                    theses devices is limited by the current-carrying capability of the polysilicon
                    supports as well as the integration of the transduction into the device. An improve-
                    ment has been achieved by using a complementary metal oxide semiconductor
                    (CMOS) process or a silicon on sapphire (SOS) CMOS process.  27  While the
                    mechanical properties of the resonating device are somewhat degraded, the use of
                    multiple metal layers and the integration of the control electronics as well as the
                    capacitive readout onto the same die improve the performance. Major advantages of
                    the Lorentz force magnetometers are the wide dynamic range, since the signal is the

























                    FIGURE 7.5 Surface micromachined ‘‘xylophone’’ magnetometer. (Source: JHU/APL.)




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