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                   272                       MEMS and Microstructures in Aerospace Applications


                       When designs also require high-frequency RF signals, the signals can be
                   introduced into the package along metal lines passing through the package walls,
                   or they may be electromagnetically coupled into the package through apertures in
                   the package walls. Ideally, RF energy is coupled between the system and the
                   MEMS without any loss in power, but in practice, this is not possible since perfect
                   conductors and insulators are not available. In addition, power may be lost to
                   radiation, by reflection from components that are not impedance matched, or
                   from discontinuities in the transmission lines. The final connection between the
                   MEMS and the DC and RF lines is usually made with wire bonds; although flip-
                   chip die attachment and multilayer interconnects using thin dielectric may also be
                   possible.


                   12.2 TYPES OF MEMS PACKAGES
                   Each MEMS application usually requires a new package design to optimize its
                   performance or to meet the needs of the system. It is possible to loosely group
                   packages into several categories. Four of these categories are: (1) metal packages,
                   (2) ceramic packages, (3) thin-film multilayer packages, and (4) plastic packages
                   are presented below.

                   12.2.1 METAL PACKAGES

                   Metal packages are often used for microwave multichip modules and hybrid
                   circuits because they provide excellent thermal dissipation and excellent
                   electromagnetic shielding. They can have a large internal volume while still main-
                   taining mechanical reliability. The package can either use an integrated base and
                   sidewalls with a lid, or it can have a separate base, sidewalls, and lid. Inside the
                   package, ceramic substrates or chip carriers are required for use with the feed-
                   throughs.
                       The selection of the proper metal can be critical. CuW (10/90), Silvar 1  (a Ni–
                   Fe alloy) (Semiconductor Packaging Materials, Armonk, NY), CuMo (15/85), and
                   CuW (15/85) all have good thermal conductivity and a higher CTE than silicon,
                   which makes them good choices. Kovar 1  (ESPI, Ashland, OR), a Fe–Ni–Co
                   alloy is also commonly used. All of these materials, in addition to Alloy-42, may
                   be used for the sidewalls and lid. Cu, Ag, or Au plating of the packages is
                   commonly done.
                       Before final assembly, a bake is usually performed to drive out any trapped gas
                   or moisture. This reduces the onset of corrosion-related failures. During assembly,
                   the highest temperature-curing epoxies or solders should be used first and subse-
                   quent processing temperatures should decrease until the final lid seal is done at the
                   lowest temperature to avoid later steps from damaging earlier steps. Au–Sn is a
                   commonly used solder that works well when the two materials to be bonded have
                   similar CTEs. Au–Sn solder joints of materials with a large CTE mismatch are
                   susceptible to fatigue failures after temperature cycling. The Au–Sn intermetallics
                   that form tend to be brittle and can accommodate only low amounts of stress.




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