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Osiander / MEMS and microstructures in Aerospace applications  DK3181_c016 Final Proof page 355 1.9.2005 12:56pm




                    Microelectromechanical Systems and Microstructures in Aerospace  355



                    TABLE 16.1
                    Screening Procedure for Hermetic MEMS Adapted from MIL-PRF-38535
                    Screen                       MIL-STD-883, Test Method (TM) and Condition

                    1. Electrostatic discharge  TM 3015 (initial qualification only)
                      (ESD) sensitivity
                    2. Wafer acceptance     TRB plan
                    3. Internal visual      TM 2010, test condition A. Internal visual inspection shall be
                                              performed to the requirements of TM 2010 of MIL-STD-883,
                                              condition A. Devices awaiting preseal inspection, or other
                                              accepted, unsealed devices awaiting further processing shall be
                                              stored in a dry, inert, controlled environment until sealed.
                    4. Temperature cycling  TM 1010, test condition C, 50 cycles minimum
                    5. Constant acceleration  TM 2001, test condition E (minimum) Y1 orientation only. All
                                              devices shall be subjected to constant acceleration, except as
                                              modified in accordance with 4.2, in the Y1 axis only, in
                                              accordance with TM 2001 of MIL-STD-883, condition E
                                              (minimum). Devices which are contained in packages that have
                                              an inner seal or cavity perimeter of 2 in. or more in total length,
                                              or have a package mass of 5 g or more, may be tested by
                                              replacing condition E with condition D in TM 2001 of MIL-
                                              STD-883. For packages that cannot tolerate the stress level of
                                              condition D, the manufacturer must have data to justify a
                                              reduction in the stress level. The reduced stress level shall be
                                              specified in the manufacturers QM plan. The minimum stress
                                              level allowed in this case is condition A.
                    6. Serialization        In accordance with device specification
                    7. Interim (pre burn-in)  In accordance with device specification
                      electrical parameters
                    8. Burn-in test         TM 1015, 160 h at þ1258C minimum Burn-in. Burn-in shall be
                                              performed on all packaged devices, at or above their maximum
                                              rated operating temperature (for devices to be delivered as wafer
                                              or die, burn-in of packaged samples from the lot shall be
                                              performed to a quantity accept level of 10(0)). For devices whose
                                              maximum operating temperature is stated in terms of ambient
                                              temperature (T A ), table I of TM 1015 of MIL-STD-883 applies.
                                              For devices whose maximum operating temperature is stated in
                                              terms of case temperature (T C ), and where the ambient
                                              temperature would cause the junction temperature (T J ) to exceed
                                              þ1758C, the ambient operating temperature may be reduced
                                              during burn-in from þ1258C to a value that will demonstrate a T J
                                              between þ1758C and þ2008C and T C equal to or greater than
                                              þ1258C without changing the test duration.
                    9. Interim (post burn-in)  In accordance with device specification
                      electrical parameters
                    10. Percent Defective Allowable  5 percent, all lots
                      (PDA) calculation

                                                                                 Continued


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