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Single-Crystal Silicon Carbide MEMS: Fabrication, Characterization, and Reliability 7-31

320

300

280 Pre AST zero offset (0 psi; cooling)
Output (mV) 260 Pre AST gross (100 psi; cooling)

240

220

200
0 50 100 150 200 250 300 350 400
(a) Temperature (°C)

20
25°C
18 Vin = 5V
Sensor # 29 100°C
16 Sensitivity: 36.60 µV/V/psi@25°C 200°C
Net bridge output (mV) 12 300°C
20.50 µV/V/psi@400°C

14
400°C
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100
(b) Applied pressure (psi)

38
36
Vin = 5 V
34 Sensor # 29
Sensitivity: 36.60 µV/V/psi@25°C
Sensitivity (µV/V/psi) 30
32

28

26
24

22

20
0 50 100 150 200 250 300 350 400
(c) Temperature (°C)

FIGURE 7.23 (a) Zero offset after Step 3 of the AST protocol of one sensor. Also shown in the full-scale output at
100psi. (b) Net voltage after Step 3. Solid and dashed plots represent heating and cooling excursions, respectively. (c)
Thermal stability of sensitivity after Step 3 of the AST.

© 2006 by Taylor & Francis Group, LLC