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APPLICATIONS                                                   11 DEVELOPMENT OF NEW PHOSPHORS
                  was confirmed by X-ray diffraction and transmission  [5] T. Kikuchi:  J. Less-Common Met.,  48, 319–323
                  electron microscope analyses. Dielectric measure-  (1976).
                  ments showed that T of the BiT–BBTi was 540 C,  [6] T. Kikuchi, A. Watanabe and K. Uchida: Mater. Res.
                                   C
                  which is 40 C higher than that of stoichiometric   Bull., 12, 299–304 (1977).
                  BiT–BBTi ceramics. The P of the BiT–BBTi crystals  [7] Y. Noguchi, M. Miyayama and T. Kudo: App. Phys.
                                        s
                                              2
                  along the a(b) axis was 52  C/cm , which is larger  Lett., 77, 3639–3641 (2000).
                  than those of BiT and BBTi crystals. It is suggested  [8] Y. Goshima, Y. Noguchi and Masaru Miyayama: App.
                  that the Bi substitution at the Ba site and the local
                  symmetry breaking of the Bi O layers are partially  Phys. Lett., 81, 2226–2228 (2002).
                                          2
                                            2
                  responsible for the larger P of BiT–BBTi.      [9] T. Kobayashi,  Y. Noguchi and Masaru Miyayama:
                                        s
                                                                     Jpn. J. Appl. Phys., 43, 6653–6657 (2004).
                                                                 [10] T. Kobayashi,  Y. Noguchi and Masaru Miyayama:
                                                                     App. Phys. Lett., 86, 012907 (2005).
                                   References
                                                                 [11] T. Takenaka: Choonpa TECHNO, 13 (8), 2–12 (2001)
                   [1] Y. Arimori, T.  Eshita:  Oyo Butsuri,  69, 1080–1084  in Japanese.
                      (2000) in Japanese.                        [12] Y. Noguchi, M. Miyayama:  Kino Zairyo,  21 (9),
                   [2] H. Ishiwara:  FED Journal,  11, 52–66 (2000) in  31–36 (2001) in Japanese.
                      Japanese.                                  [13] H. Irie, M. Miyayama and  T. Kudo: Jpn. J.  Appl.
                   [3] M. Okuyama:  Denki Gakkai Gakujyutsu Ronbunshi  Phys., 40, 239–243 (2001).
                      E, 121, 537–541 (2003) in Japanese.        [14] Y. Noguchi, M. Miyayama and T. Kudo: Phys. Rev. B,
                   [4] Y. Fujisaki: Kino Zairyo, 23, 22–30 (2003) in Japanese.  63, 214102 (2001).



                            APPLICATION 11

                   11       DEVELOPMENT OF NEW PHOSPHORS





                  1. History of development of nanophosphor      new synthesis method and the surface modification.
                                                                 In 1994, Bhargava et al. reported that the lumines-
                  There are many famous working hypotheses as leg-  cence efficiency of surface-modified ZnS:Mn 2
                  ends in various research fields. If famous one is cho-  nanophosphor increased with decrease of particle size
                  sen in the phosphor research field, it is that  [2]. The high-efficiency ZnS:Mn 2   nanophosphor has
                  “luminescence efficiency of fine(nano)particle phos-  the following two characteristics. One is new surface
                  phor is low”.  When the particle size of phosphor  modification by methacrylic acid. As indicated above,
                  material was reduced, the luminescence efficiency  the surface of the nanophosphor has many defects and
                  decreased remarkably. The nanophosphors have large  non-radiative relaxation is dominant at the phosphor
                  surface area with many defects than that of bulk phos-  surface.  The other is new hypothesis that there is
                  phor [1]. This phenomenon appears especially in sub-  strong coupling between ZnS s–p electron and Mn 2
                  micron-size phosphor. Therefore, bulk phosphor with  d electron in the nanophosphor by quantum effect.
                  several microns diameter has been usually used in  Bhargava claimed that the hypothesis was supported
                  many applications such as displays and lamps.  by observation of shorter luminescence lifetime (3.7 ns
                    The synthesis method of a nanophosphor is classi-  and 20.5 ns) of nanophosphor than the bulk one
                  fied into chemical synthesis methods such as a solu-  (1.8 ms). However, it is considered that the short life-
                  tion method and physical synthesis methods such as  times of the ZnS:Mn 2   nanophosphor are due to the
                  mechanical grinding. In the chemical synthesis  structural defects at present [3–6].
                  method, the nanophosphor obtained at low tempera-  Apart from the quantum effect, the former surface
                  ture has a low crystallinity and high temperature  modification technique by the organic materials
                  annealing leads to the grain growth. In the physical  became a useful processing method for the nanophos-
                  method, the luminescence efficiency decreases by the  phors. Isobe et al. reported that emission intensity of
                  formation of the surface defects with the mechanical  ZnS:Mn 2   nanophosphor increased with the surface
                  contact. On the other hand, many attempts to obtain a  modification of carboxylic acid [7–9]. This is not only
                  high-luminance nanophosphor were carried out by  a capping effect of surface defects but also efficient

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