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Photodiodes and Receivers



                                                                   Photodiodes and Receivers  117


                      for relatively strong, clean signals to complex circuitry if the receiver needs to
                      interpret weak, distorted signals at high data rates.
                        Semiconductor-based photodiodes are the main devices that satisfy optical
                      receiver requirements. The two basic types of devices used are called a pin photo-
                      diode and an avalanche photodiode (APD).
                        The choice of a photodetector material determines the wavelength range over
                      which the device will operate. Material choices include Si, Ge, or GaAs, InGaAs,
                      and InGaAsP. Of these the most widely used are Si for operation in the 850-nm
                      region and InGaAs for both long-wavelength pin and avalanche photodiodes.
                      Table 7.1 summarizes the wavelength ranges over which various materials are
                      sensitive.
                        Other important characteristics of a photodetector include

                      ■ Its quantum efficiency, which is the number of electron-hole pairs that are
                       generated per incident photon of energy hν
                      ■ Its responsivity, which specifies the photocurrent generated per unit optical
                       power
                      ■ Its response speed, which is particularly important to properly interpret high
                       data rate signals
                      ■ The gain and its associated noise figure for avalanche photodiodes

                        Tables 7.2 and 7.3 list representative performance values for pin and ava-
                      lanche photodiodes, respectively. The values were derived from various vendor
                      data sheets and from performance numbers reported in the literature. They are
                      given as guidelines for comparison purposes.


          Further Reading
                      1. D. Neamen, Semiconductor Physics and Devices, 3d ed., McGraw-Hill, New York, 2003.
                      2. S. O. Kasap, Optoelectronics and Photonics, Prentice Hall, Upper Saddle River, N.J., 2001.
                      3. G. Keiser, Optical Fiber Communications, 3d ed., McGraw-Hill, Burr Ridge, Ill., 2000, Chap. 6.
                      4. S. R. Forrest, “Optical devices for lightwave communications,” in S. E. Miller and I. P. Kaminow,
                        eds., Optical Fiber Telecommunications—II, Academic, New York, 1988.
                      5. M. C. Brain and T. P. Lee, “Optical receivers for lightwave communication systems,” J. Lightwave
                        Technology, vol. 3, pp. 1281–1300, December 1985.



















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