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Strain and Pressure Sensors Based on OFET   109

                   4.  The sensor transduction bandwidth should not be less than
                      100 Hz, intended as tactile image frame frequency. Individual
                      sensing units should accordingly possess a faster response,
                      related to their number, when multiplexing is performed.
                    5.  Spatial resolution should be at least of the order of 1 to 2 mm,
                      as a reasonable compromise between gross grasping and fine
                      manipulation tasks.

                   The development of tactile sensors is one of the most difficult
               aspects of robotics. Many technologies have been explored, includ-
               ing a carbon-loaded elastomer, piezoelectric materials, and micro-
               electromechanical systems. Artificial skin examples, able to detect
               pressure, already exist; but it is difficult to manufacture artificial
               skin in large enough quantities to cover a robot body, and it does
               not stretch. The most promising examples of “electronic skin-like”
               systems with large areas are based on organic semiconductors and
               have been reported by Takao Someya’s group at University of
               Tokyo.  They have developed conformable, flexible, wide-area net-
                     24
               works of thermal and pressure sensors in which measurements of
               temperature and pressure mapping were performed simultane-
               ously. The device structure is shown in Fig. 3.18.
                   Someya has developed a skin that is stretchable and that remains
               as sensitive to pressure and temperature when it is at full stretch as
               when it is relaxed. In the presented design, both sensor networks con-
               tain their own organic transistor active matrices for data readout.
               This arrangement means that each network is self-contained and




                     Polyimide                     Pen
                                                   Anode
                     Cu                  Thermal    CuPc (P)
                                          sensor    PTCDI (N)
                     Conductive rubber               Cathode
                                         Pressure  Parylene
                                          sensor
                                                    Au
                                                         Paste
                       Au                           Au
                     Parylene                      Parylene
                       s  Pentacene   d             s  Pentacene   d
                     Polyimide           Transistor  Polyimide
                         g                             g
                     Base film                     Base film

               FIGURE 3.18  Schematic of the device structure reported in Ref. 24. A cross-
               sectional illustration of the pressure (left) and the thermal (right) sensor cells
               with organic transistors is shown. (Reprinted with permission from Ref. 24.
               Copyright 2005, National Academy of Sciences, USA.)
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