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136    Cha pte r  F o u r


                   Diode driver
                                              70
                 Function generator           60
                                 Laser diode
                                              50
                   Lock-in                   I max  (nA)  40
                  Amplifier                   30
                                              20
                                  Electrode Ag
                                              10
                       P(VDF-TrFE) layer
                                                 1  2  3  4  5  6  7  8
                                                      Poling procedure number
                         Substrate
                                              400
                          (a)
                                              350
                                              300
                   80 mW excitation at 808 nm
                                             U max  (mV)
            1E–7                              250
                                       1 0.1  200
                                              150
           Pyroelectric. Aw. (A)  1E–9  0.01  Pyroelectric. Aw. (V)  100 0  1  2  3  4  5  6  7  8
            1E–8
                                               50
                                       1E–3
                                       1E–4
                                               1: 250 V (sine)  Poling procedure number
                                                             5: 500 V (sqr + absorber)
            1E–10                      1E–10
                                               2: 400 V (sine)  6: 400 V (80°C)
              10 –2 10 –1 10 0  10 1  10 2  10 3  10 4  10 5  10 6  3: 500 V (sine)  7: 400 V (100°C)
                                               4: 500 V (sine + absorber)  8: 400 V (130°C)
                       Frequency (Hz)
                          (c)                               (b)
          FIGURE 4.10  (a) Setup for the measurement of the pyroelectric response.
          (b) Infl uence of poling voltage, poling temperature, laser excitation waveform and
          absorber structure on the maximum of the pyroelectric current and voltage response
          (see part c), measured for a sample with 2.9 μm thick P(VDF:TrFE) layer and 70% VDF
          content on glass substrate at an excitation power of 80 mW. (c) Frequency dependence
          of the pyroelectric response of the same sample in voltage and current modes. The
          voltage response points at very low frequencies (below the cutoff frequency of the lock-
          in amplifi er setup) were taken with a high-impedance parametric analyzer (MBPA) and
          correspond to poling at 500 V and sine excitation for a capacitance with absorber.

               the sample generate an alternating current (compare to Sec. Pyroelec-
               tricity), which can be measured using a lock-in amplifier. The reference
               frequency is taken from the function generator which also drives the
               laser diode. The measurement setup for the detection of pyroelectric
               responses is shown as an inset in Fig. 4.10.
               Poling
               To measure a pyroelectric effect, it is important to align the dipoles in
               a preferential direction in order to achieve a macroscopic spontaneous
               polarization. This treatment is called poling. The poling can be achieved
               by applying an appropriate voltage to the electrodes, thus generating
               an external field, which should be higher than the coercive field of the
               sample. 29, 30  Since the coercive field of the P(VDF-TrFE) samples is
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