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An Intr oduction to Or ganic Photodetectors     215



                    0.0006                                        0.6



                    0.0004                                        0.4
                  I SC  (A)                                            V OC  (V)

                    0.0002                                        0.2



                        0                                         0

                         0    0.2   0.4  0.6   0.8    1    1.2   1.4
                                        Intensity (mW)
               FIGURE 6.11  The short-circuit photocurrent and open-circuit voltage as
               a function of light intensity for the ITO/PEDOT:PSS/P3HT:PCBM/Al bulk
               heterojunction device shown in Fig. 6.10.

               increased by an order of magnitude, giving rise to an approximate
               10-fold increase in I , then V  need change by only a very small
                                 ph      OC
               amount to generate a compensating increase in I  . The sublinear
                                                         Vphoto
               intensity dependence of V  is far less useful than the linear response
                                     OC
               of I . Moreover, V  inherits from I   a strong temperature depen-
                  SC           OC            Vphoto
               dence that makes it far more susceptible to drifts in temperature than
               I . Consequently in light-sensing applications, I  is virtually always
                SC                                      SC
               the preferred sense parameter.
                   In the interests of simplicity, the discussion above has focused on
               simple single-layer bulk heterojunction devices. The situation is
               slightly different in the case of discrete heterojunction devices since
               asymmetry in the generation profiles of the electrons and holes gen-
               erates sizable concentration gradients at the heterojunction that tend
               to drive the charges to their respective parent electrodes even in the
               absence of an electric field.  Nonetheless similar arguments to those
                                      47
               provided above apply, and the resultant photocurrent-voltage curves
               are qualitatively similar in appearance. Importantly, our conclusion
               that I  is the preferred sense parameter due to its linear response and
                    SC
               superior temperature stability also applies to discrete heterojunction
               devices. This same message also extends to more complex multilayer
               architectures.

               6.3.4 The Equivalent Circuit
               A photodiode—organic or otherwise—may be represented conceptu-
               ally by an equivalent circuit comprising an (infinite impedance) cur-
               rent source I  in parallel with a diode D, a shunt resistor R  and a
                          S                                       sh
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