Page 241 - Organic Electronics in Sensors and Biotechnology
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218    Cha pte r  S i x

             0.6                            0.25
                 OPV                               OPV
             0.5
                                            0.20
             0.4
            EQE (*100%)  0.3               Responsivity (A/W)  0.15
                                            0.10
             0.2
             0.1     Si PV                  0.05      Si PV
             0.0                            0.00
              400  450  500  550  600  650  700  750  400  450  500  550  600  650  700  750
                      Wavelength (nm)                  Wavelength (nm)
                          (a)                              (b)
          FIGURE 6.13  (a) External quantum effi ciency spectral response curves and
          (b) photosensitivity spectral response curves for a Si device and an ITO/PEDOT:
          PSS/P3HT:PCBM/Al device.


               Usually S(λ) and  η(λ) are determined by reference to a calibrated
               photodetector: if, at the illumination wavelength  λ, the calibrated
               photodetector has a photosensitivity S (λ) and a quantum efficiency
                                                cal
               η (λ) and the currents from the test device and calibrated detector
                 cal
               are I(λ) and I (λ), respectively, then:
                          cal
                                      λ
                                                       λ
                              λ
                                               ()
                             S()  =  I()      ηλ   =  I()
                                      λ
                               λ
                                                λ
                            S ()   I ()      η  ()   I (()λ         (6.21)
                             cal    cal       cal    cal
                   The spectral response characteristics of a typical ITO/PEDOT:
               PSS/P3HT:PCBM/Al device are shown in Fig. 6.13 in terms of both
               photosensitivity and quantum efficiency. Also shown are the spectral
               response characteristics of a typical Si photodiode (OSRAM, SFH2430)
               for comparison. The peak efficiencies of the organic device (0.24 A/W,
               55.7%) are comparable to those of the silicon device (0.18  A/W,
               41.0%), although the active range is much narrower due to the nar-
               row absorption range of the P3HT:PCBM system. (Note that although
               the silicon photodiode we have chosen is fairly typical, superior
               devices with substantially higher quantum efficiencies are available;
               likewise, superior organic devices can also be fabricated.)

               6.4.2  Rise Time and Cutoff Frequency
               The speed of response is a critical consideration in data communica-
               tions and time-resolved sensing applications, and it is usually char-
               acterized in terms of either the rise time or cutoff frequency. The rise
               time of a photodiode is conventionally defined as the time required
               for the output to change from 10 to 90% of its final level in response
               to a step increase in the intensity (Fig. 6.14). The fall time is similarly
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