Page 68 - Organic Electronics in Sensors and Biotechnology
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Scaling Effects in Organic Transistors and Transistor-Based Chemical Sensors   45

               this effect is. It is in this fashion that nanoscale organic transistors
               exhibit a remarkably different behavior in charge transport and
               chemical sensing from the microscale counterparts.
                   According to the mobility study under low temperatures down to
               77 K,  the microscale transistors presented in the charge transport
                    68
               and chemical sensing work exhibited a transport mechanism of ther-
               mally activated hopping, which is mainly attributed to hopping at
               grain boundaries, following the relation as  μ ~ exp [−E /(kT)]. As
                                                                a
               measured in an Arrhenius plot of temperature-dependent mobility
               under different gate bias for a pentacene transistor with 2 μm channel
               length,  the activation energy E  (energy barrier at a grain boundary)
                     68
                                          a
               is 130 meV under −5 V gate bias, and reduces to 52 meV under −30 V
               gate bias. The mobility in the OTFTs presented in this work increases
               with increasing gate bias, which is attributed to filling of the tail states
               of the density of states (DOS). Also the gate dependence is stronger at
               lower temperatures. These phenomena are well known for disor-
               dered organic field-effect transistors where the band tail of localized
               states has a much wider distribution at grain boundaries than within
               each grain body, due to the increased disorder at grain boundaries. 27–28
               It would be meaningful to investigate the influence of the sensing
               event on the distribution of tail states through the combination of
               sensing experiments and temperature-dependent charge transport
               measurements. However, this requires much experimental care.
               Most VOCs possess a high vapor pressure so that the analytes will
               not remain at the sensing sites of the device for long enough time.
               Therefore the comparison of temperature dependence of transistors
               before and after sensing might not give an accurate view for what
               happened during the sensing action. Furthermore, performing tem-
               perature dependence experiments in the presence of analyte mole-
               cules might be difficult due to the condensation effect of VOCs at
               low temperatures.


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