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1. NANOELECTROMECHANICAL SYSTEMS                               37


                                                               (
             three main  modalities, namely, single-walled  nanotubes  SWNTs), which
             range  in  diameter  from approximately 0.4nm to more  than 3nm, multi-
             walled nanotubes (MWNTs), which range in diameter from approximately
             1.4nm to more than 100nm, and ropes, which are parallel stripes of SWNTs
             stuck to each other. Their physical properties are  astounding.  With  aspect
                                                       µ
             ratios of the order of 10-1000, they are several  m (ropes up to cm) long,
             possess a Young’s modulus, tensile strength, and density of ~1TPa (Steel:
                                                                         3
                                                                    g
             0.2TPa), 45GPa (Steel: 2 GPa), and 1.33 ~ 1.4 / cmg  3   (Al: 2.7  / cm ). In
             addition,  their conductivity  may  be metallic  or semiconducting, and they
                                                                         3
                                                         3
             have  a  current  carrying capability of ~1TA  / cm  (Cu:  1GA  / cm ). A
             number of techniques are employed to produce CNTs, for instance, the arc
             discharge, laser ablation and chemical  vapor deposition  methods.  These
             methods usually yield a random mixture of SWNTs, MWNTs, and ropes and
             research is under way to determine techniques for the controlled growth of a
             specific type  of CNT. For instance, Li  et al. [47] have reported the
             development of a catalyst-based method that predominantly yields SWNT.
             In this method, a silicon wafer is pre-patterned with alumina nanoparticles,
             which  serve  as catalysts for  their CVD growth, producing  SWNTs  with
             diameter under 1.5nm.
                The  narrow  diameter of CNTs  makes them ideal candidates for
             applications as SPM tips, as well as a number of devices, such as channels
             for field effect transistors. Figure 1-33 shows the formation of CNT tips.


                                       Anisotropic etch
                                       Anisotropic etch


                                       Catalyst deposition
                                       Catalyst deposition





                                    CVD nanotube growth
                                    CVD nanotube growth


                      Figure 1-33. Formation of AFM tips via CNT growth.  (After [48].)



             1.2.3.6 Nanomanipulation

                The ultimate  degree of control in  nanofabrication,  is  embodied  in  the
             ability to manipulate individual atoms/nanoparticles with precision. This is
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