Page 228 - Radar Technology Encyclopedia

integrated circuit, digital integrated circuit, semiconductor 218

(tens and hundreds of millions of operations per second) and A linear integrated circuit implements a low- or high-fre-
in digital signal processors. IAM quency amplifier. Base standard crystals containing a specific
Ref.: Fink (1982), p. 8.80; Efimov (1983), p. 22; Nikolaev (1992), p. 11. number of elements are used for these integrated circuits: for
example, one of them contains 12 elements, another 24 ele-
A distributed IC is a microwave microelectronic circuit with
ments (e.g., 7 transistors, 10 resistors, 7 “tunnels” for making
distributed parameters. The most commonly used form of dis-
connections). IAM
tributed circuit is the microstrip transmission line. SAL
Ref.: Popov (1980), p. 207; Fink (1982), p. 8.45.
Ref.: Fink (1975), p. 8.76.
A lumped integrated circuit is a microwave microelectronic
A germanium integrated circuit is a type of semiconductor
circuit using lumped circuit elements such as resistors, capac-
integrated circuit. In some cases, owing to a number of
itors, or inductors. For electrical components to behave as
advantages, the use of germanium makes it possible to create
lumped elements, their physical dimensions have to be much
faster logic circuits. In addition, germanium transistors are
smaller than the wavelength of the signal. Integrated circuit
marked by a lower dependence of the gain coefficient on the
components can maintain their lumped characteristic up to
temperature, which makes it possible to use such logic cir-
much higher frequencies than their discrete counterparts. SAL
cuits at reduced temperatures. IAM
Ref.: Fink (1975), p. 8.96.
Ref.: Popov (1980), p. 84.
A metal-insulator-semiconductor- (MIS-) structure inte-
In a hybrid integrated circuit (HIC) some elements have an
grated circuit is based on an MIS-transistor structure. This
independent structural formulation. The technology of pro-
type of IC is flexible because of the variety of combinations
ducing hybrid microcircuits is based on successive applica-
that can be realized within a single silicon crystal and are typ-
tion of thin-film passive components (microstrip transmission
ically used for producing complex microwave circuits of low-
lines, oscillators, microwave components with distributed and
and medium-speed capabilities. Sometimes mutual use of
lumped parameters) onto an insulating substrate with subse-
bipolar transistors and MIS-transistors can enhance IC perfor-
quent connection of active and some passive components and
mance. AIL
assemblies (bridges, directional couplers, filters, ferrite
Ref.: Popov (1980), p. 157; Fink (1982), p. 8.49.
devices, etc.) in the form of individually mounted parts.
Semiconductor instruments in HIC are primarily ungrounded, A monolithic integrated circuit is produced as a single
with a low lead inductance. Integrated circuits are connected whole from a whole semiconductor crystal (see semiconduc-
to external devices by coaxial-strip adapters and electrical tor integrated circuit) or other solid-state material that con-
connectors. trols the characteristics of the circuit. The elements of a
HICs are produced by industry in the form of parametric monolithic integrated circuit are arranged within it, with some
and transistorized amplifiers, switches, mixers, oscillators, on the surface. The term monolithic microwave integrated
phase inverters, transistorized multiplication circuits, ele- circuit (MMIC) applies not only to a material of homoge-
ments of phased-array antennas, and so forth. IAM neous structure, but also to a nonhomogeneous material, for
Ref.: Popov (1980), p. 85; Nikolaev (1992), p. 12; Gassanov (1988), p. 24. example silicon on sapphire. The semiconductor material
(monostatic film) may be in small local sectors of the sub-
An IGFET-structure integrated circuit is designed on the
strate of the integrated circuit. Such circuits have the highest
basis of IGFET transistors. Integrated IGFET circuits can be
degree of integration. IAM
used to make microwave complex integrated circuits that
have high or low speed, including integrated matrices (sys- Ref.: Popov (1980), p. 238; Fink (1982), p. 8.54.
tems in the form of a large number of standard structural A MOS-structure integrated circuit is made on the basis of
cells). Integrated IGFET circuits are marked by their variety. metal-oxide semiconductor transistors, which are a variety of
This may be explained by the universality and multiplicity of IGFET transistor. (See IGFET-structure integrated cir-
the combinations that may be produced within a single silicon cuit.) IAM
crystal. Joint use of bipolar transistors and IGFET transistors
A passive integrated circuit does not contain active amplify-
makes it possible to improve the characteristics of the devices
ing or rectifying elements. It is usually made by successive
produced on their basis. IAM
application of passive elements (distributed, lumped induc-
Ref.: Popov (1980), p. 157; Fink (1982), p. 8.32.
tance coils, capacitors, intracircuit connectors) onto a single
A large-scale integrated (LSI) circuit is an integrated circuit insulating substrate. IAM
with a high degree of integration of components, performing Ref.: Popov (1980), p. 278; Nikolaev (1992), p. 12.
the functions of an assembly of electronic apparatus (e.g., an
A semiconductor integrated circuit consists of active and
arithmetic-logic device or operational storage device). A
passive components produced in the same semiconductor
large-scale integrated circuit in an IGFET structure can con-
monocrystal. Some of the connections in such a circuit may
tain 103 to 105 elements, and a bipolar one 500 to 2,000. Cir-
be in three dimensions, and some on the protective layer of
cuits with greater integration are called very-large-scale
the crystal. At frequencies up to 10 GHz, structures of the sil-
integrated circuits. IAM
icon-on-sapphire type (silicon integrated circuits) are used for
Ref.: Popov (1980), p. 54; Jordan (1985), p. 20.7; Nikolaev (1992), p. 10.
semiconductor integrated circuits. In the higher frequency