Page 216 - Radiochemistry and nuclear chemistry
P. 216

200                  Radiochemistry  and  Nuclear  Chemistry



                           o VO                 vp/v0
                                               1.0

                        Re
                                               0.9
                                   Ce
                     A
                                               0.8
                                                                       II
                                               0.?
                 T  C,                                  I     I     I     I     l     I
                                               0.6
                                                        I    2     3     4     5     6
                                                                  t(iJs)
                            (a)                                    (b)
                                FIG.  8.3.  (a) Equivalent circuit (b) pulse shape in point P.


               of the system (the decay time of the charge of the system);  in the time  1/b  the voltage has
               dropped  to  Vole.  Assuming  the  charge  collection  ends  after  1  /~s  this  is  equivalent  to
               opening  switch  S at  that  time.  The  voltage  in  P  has now  fallen  to  its  minimum value  as
               indicated  in  Figure  8.3(b).
                When S is opened charge starts building up on the capacitors by current flowing from the
               bias voltage through  resistor R e.  The voltage in P  begins  to increase  again according  to

                                     Vp IV o  =  1 -  (1  -  V m/Vo) e -*/(R'O     (8.5b)

               where  V m is  the  voltage  in  P  when  the  switch  is  opened  again,  t  is  now  the  time  after
               opening of S and  C  =  C e  +  C i. If we assume R e  =  50 k9  the voltage build-up will follow
               the climbing curve to the fight of 1/zs in Figure 8.3(b).  In practice,  the current flow stops
               more  gradually  and  the potential  in P  follows a  smoother curve.
                The voltage drop at P results in a negative voltage pulse after the capacitor C e. In Figure
               8.3(b)  the voltage change at point  P  is  more than 40%  of the bias  voltage;  this  is highly
               exaggerated,  since  the  change  is normally a  very  small  fraction  of the  bias  voltage.  This
               is  due  to  the  fact  that  the  current  is  carried  only  by  the  charge  carriers  formed  in  the
               detector.  If the  number  of primary  charge  carriers  formed  is  n i,  the  charge  transport  AQ
               is

                                    AQ  =  -1.60  •  10 -19 n i a  (Coulomb)         (8.6)

               where a  is the multiplication factor (1 in solid state detectors,  ~  1 in gas-fillext detectors).
               When a  <  1 it has the same meaning as the collection efficiency ~/in (8.3).  The maximum
               voltage drop  is then

                                              AV  .~  AQ/C                          (8.7)
   211   212   213   214   215   216   217   218   219   220   221