Page 234 - Semiconductor For Micro- and Nanotechnology An Introduction For Engineers

Summary for Chapter 6
6.4 Summary for Chapter 6
The chapter started with the Boltzmann transport equation. It describes
the way in which a particle density moves through configuration space
along a phase space trajectory. The BTE is a balance between the stream-
ing motion of particles along their phase space trajectories and the scat-
tering forces that modify this path. We saw that, depending on the
requirements of our model, the one or the other transport description has
to be applied. Modern electronic device simulators for electron transport
in semiconductor combine the different levels of description in one appli-
cation. This so called mixed–mode simulation applies the detailed
description of local non–equilibrium where it is necessary, manages a
local equilibrium description where it is adequate, and includes boundary
conditions from a circuit connected to the device defined on a global bal-
ance level.

6.5 References for Chapter 6

6.1 C. Cercigniani, The Boltzmann Equation and Its Application,
Springer (1988)
6.2 P.S.Kireev, Semiconductor Physics, MIR Publishers Moscow
(1978)
6.3 D. K. Ferry, Semiconductors, Macmillan Publishing Company
(1991)
6.4 S. Selberherr, Analysis and Simulation of Semiconductor Devices,
Springer (1984)
6.5 M. Rudan and F. Odeh, Multidimensional Discretization Scheme
for the Hydrodynamic Model of Semiconductor Devices, COMPEL,
Vol. 5, No. 3, 149-183 (1986)
6.6 W. Jones, N. H. March, Theoretical Solid State Physics, Vols. I and
II, John Wiley & Sons (1973)

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