Page 79 - Semiconductor Manufacturing Handbook
P. 79
Geng(SMH)_CH06.qxd 04/04/2005 19:37 Page 6.18
PLASMA PROCESS CONTROL
6.18 SEMICONDUCTOR FUNDAMENTALS AND BASIC MATERIALS
54. Kanoh, M., M. Yamage, and H. Takada, “End-point detection of reactive ion etching by plasma impedance
monitoring,” Japan Journal of Applied Physics, Vol. 40, No. 3a, pp. 1457–1462, 2001.
55. Bushman, S., T. F. Edgar, and I. Trachtenberg, “Radio frequency diagnostics for plasma etch systems,”
Journal of the Electrochemical Society, Vol. 144, No. 2, pp. 721–731, 1997.
56. Hanson, E., H. Benson-Woodward, and M. Bonner, “Optimising CVD through RF metrology,” Plasma
Monitoring, pp. 25–28, 1999.
57. Zhao, D. W., and C. Spanos, “Towards a complete plasma diagnostic system,” IEEE Conference Proceedings
for the International Symposium on Semiconductor Manufacturing, pp. 137–140, 2001.
58. Schneider, C., L. Pfitzner, and H. Ryssel, “Integrated metrology: An enabler for advanced process control
(APC),” Proceeding of SPIE, Vol. 4406, pp. 118–130, 2001.
59. Koh, A. T. -C., N. F. Thornhill, and V. J. Law, “Principal component analysis of plasma harmonics in end-
point detection of photoresist stripping,” IEEE Electronic Letters, Vol. 35, No. 16, pp. 1383–1385, 1999.
60. Mott-Smith, H. M., and I. Langmuir, “The theory of collectors in gaseous discharges,” Physical Review,
Vol. 28, pp. 727–763, 1926.
61. Malyshev, M. V., et al., “Langmuir probe studies of a transformer coupled plasma, aluminum etcher,” Journal
Vacuum Science Technology A, Vol. 17, No. 2, pp. 480–492, 1999.
62. Murete de Castro, R., et al., “End-point detection of polymer etching using langmuir probes,” IEEE
Transactions on Plasma Science, Vol. 28, No. 3, pp. 1043–1049, 2000.
63. Thomas, T. L., and E. L. Battle, “Effects of contamination on langmuir probe measurements in Glow dis-
charge plasmas,” Journal of Applied Physics, Vol. 41, No. 8, pp. 3428–3432.
64. Szuszczewicz, E. P., and J. C. Holmes, “Surface contamination of active electrodes in plasmas: Distortion of
conventional langmuir probe measurements,” Journal of Applied Physics, Vol. 46, No. 12, pp. 5134–5139,
1975.
65. Biolsi, P., et al., “An advanced endpoint detection solution for <1% open areas,” Solid State Technology, Vol. 39,
No. 12, p. 59, 1996.
66. Hudson, E. A., and F. C. Dassapa, “Sensitive end-point detection for dielectric etch,” Journal of the
Electrochemical Society, Vol. 148, No. 3, pp. C236–C239, 2001.
Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
Any use is subject to the Terms of Use as given at the website.